Ultra wide band power amplifier using GaN on SI HEMT device
- GIOFRE', ROCCO
- COLANTONIO, PAOLO
- GIANNINI, FRANCO
- Pantellini, A
- Nanni, A
- Lanzieri, C
- Pistoia, D.
Publication date
January 2012
DOI Publisher
Institute of Electrical and Electronics Engineers (IEEE)Abstract
This contribution describes the design of an ultra wide band hybrid power amplifier for applications in the frequency range from 1 GHz to 6 GHz. The amplifier is designed with a GaN-on-Si HEMT device provided by SELEX-SI, in a single ended configuration and using the source/load-pull and Scattering parameters measured data. The amplifier has been designed using a CAD oriented broad band matching approach for both input and output networks
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