The diamond nucleation and growth processes on a scratched and a virgin Si(100) surface were studied by both electron spectroscopies (XPS) and microstructural probes (SEM, TEM) in order to connect the nature of surface species with the structural changes. We have shown that a preliminary scratching of the substrate surface hugely enhances the nucleation kinetics relative to the virgin sample. This is explained by the much faster formation of stable diamond nuclei in correspondence of suitable nucleation sites. The results have been modeled, considering the covered surface S as the unique parameter. S obeys an Avrami plot of the form S = 1 - exp (-kt(n)) where the exponent n approximate to 2.5 +/- 0.4 over a wide range of deposition is indic...
[[abstract]]Methods for seeding silicon substrates with pretreatments and the in situ generation of ...
The primary aim of this work was to contribute to the understanding of the bias enhanced nucleation ...
In this work we present a characterization by Auger electron spectroscopy (AES) and scanning electro...
The diamond nucleation and growth processes on a scratched and a virgin Si(100) surface were studied...
The nucleation and growth of CVD diamond has been investigated on scratched and virgin Si(100) by ph...
The nucleation and growth kinetics of diamond deposited by hot-filament chemical vapour deposition (...
A diamond nucleation site responsible for epitaxial growth of diamond on silicon by chemical vapor d...
The nucleation and growth of diamond on Si(100) were studied by X-ray photoelectron spectroscopy. We...
Diamond crystallites have been nucleated and grown by hot filament chemical vapor deposition at 600Â...
We investigated the influence of a hydrogenated disordered carbon (a-C:H) layer on the nucleation of...
Diamond growth on Si(100) is studied by scanning Auger microscopy (SAM), Auger electron spectroscopy...
A direct diamond epitaxy on the silicon substrate is demonstrated not only at the interface formed d...
The mechanisms involved in the diamond nucleation on 3C–SiC surfaces have been investigated using a ...
This paper presents a theoretical study on the initial stage of diamond nucleation during chemical v...
Diamond deposits of well-separated particles have been obtained by the hot filament CVD technique on...
[[abstract]]Methods for seeding silicon substrates with pretreatments and the in situ generation of ...
The primary aim of this work was to contribute to the understanding of the bias enhanced nucleation ...
In this work we present a characterization by Auger electron spectroscopy (AES) and scanning electro...
The diamond nucleation and growth processes on a scratched and a virgin Si(100) surface were studied...
The nucleation and growth of CVD diamond has been investigated on scratched and virgin Si(100) by ph...
The nucleation and growth kinetics of diamond deposited by hot-filament chemical vapour deposition (...
A diamond nucleation site responsible for epitaxial growth of diamond on silicon by chemical vapor d...
The nucleation and growth of diamond on Si(100) were studied by X-ray photoelectron spectroscopy. We...
Diamond crystallites have been nucleated and grown by hot filament chemical vapor deposition at 600Â...
We investigated the influence of a hydrogenated disordered carbon (a-C:H) layer on the nucleation of...
Diamond growth on Si(100) is studied by scanning Auger microscopy (SAM), Auger electron spectroscopy...
A direct diamond epitaxy on the silicon substrate is demonstrated not only at the interface formed d...
The mechanisms involved in the diamond nucleation on 3C–SiC surfaces have been investigated using a ...
This paper presents a theoretical study on the initial stage of diamond nucleation during chemical v...
Diamond deposits of well-separated particles have been obtained by the hot filament CVD technique on...
[[abstract]]Methods for seeding silicon substrates with pretreatments and the in situ generation of ...
The primary aim of this work was to contribute to the understanding of the bias enhanced nucleation ...
In this work we present a characterization by Auger electron spectroscopy (AES) and scanning electro...