GaAs MMIC Doherty power amplifier with asymmetrical drain bias voltage

This paper presents a 3.4×2.3mm2 MMIC Doherty Power Amplifier in pHEMT GaAs technology, designed for XBand applications (9.6 GHz). The obtained results shown 31dBm maximum output power with a 47.6% associated drain efficiency. Moreover, in the designed 6dB of output power back-off, from 25dBm to 31dBm output power, the efficiency is higher than 30% with a related gain compression lower than 1.5dB. As will be detailed, such a performance are maintained almost constant in a frequency bandwidth greater than 10% (9.1-10.1 GHz)