In this contribution the features of GaN technology for power applications will be explored from the designer point of view. Therefore, the active device will be studied as a black box using its simplified model and putting in evidence the role of its key parameters such as the knee voltage, the breakdown voltage, etc. At the end, the experimental results of several power amplifiers designed using different strategies will be presented to highlight both, the capabilities and/or drawbacks of such material
There is a growing interest in transistors based on Gallium Nitride in recent years upon development...
Class D amplifiers are increasingly prevalent in audio applications due to its high power-efficiency...
Throughout the history of power electronics, main driving force of developments is attribute to inno...
In this contribution the features of GaN technology for power applications will be explored from the...
In this contribution the research activities and trends in the field of RF and microwave power ampli...
Most wireless systems must be able to output a high enough output power to serve their purpose. A po...
Gallium Nitride (GaN) based power devices have been demonstrated to deliver higher energy efficiency...
A comparative evaluation is provided in this paper regarding two design approaches for Ka-band Galli...
This thesis investigates the possibility to design a power amplifier at Ku-band using hybrid design ...
A hybrid power amplifier building block and a power amplifier module from 2 GHz to 6 GHz were design...
Gallium Nitride based devices due to their inherent material properties are considered as one of the...
The aim of the present paper is to highlight the possible benefits coming from the use of the GaN hi...
This article presents the winning power amplifier implemented with a gallium nitride (GaN) high elec...
In this paper we discuss the advantages offered by GaN HEMT technology in the design of narrow- and ...
The need for high power, highly efficient, multi-band and multi-mode radio frequency (RF) and microw...
There is a growing interest in transistors based on Gallium Nitride in recent years upon development...
Class D amplifiers are increasingly prevalent in audio applications due to its high power-efficiency...
Throughout the history of power electronics, main driving force of developments is attribute to inno...
In this contribution the features of GaN technology for power applications will be explored from the...
In this contribution the research activities and trends in the field of RF and microwave power ampli...
Most wireless systems must be able to output a high enough output power to serve their purpose. A po...
Gallium Nitride (GaN) based power devices have been demonstrated to deliver higher energy efficiency...
A comparative evaluation is provided in this paper regarding two design approaches for Ka-band Galli...
This thesis investigates the possibility to design a power amplifier at Ku-band using hybrid design ...
A hybrid power amplifier building block and a power amplifier module from 2 GHz to 6 GHz were design...
Gallium Nitride based devices due to their inherent material properties are considered as one of the...
The aim of the present paper is to highlight the possible benefits coming from the use of the GaN hi...
This article presents the winning power amplifier implemented with a gallium nitride (GaN) high elec...
In this paper we discuss the advantages offered by GaN HEMT technology in the design of narrow- and ...
The need for high power, highly efficient, multi-band and multi-mode radio frequency (RF) and microw...
There is a growing interest in transistors based on Gallium Nitride in recent years upon development...
Class D amplifiers are increasingly prevalent in audio applications due to its high power-efficiency...
Throughout the history of power electronics, main driving force of developments is attribute to inno...