The influence of the wetting layer morphology on the nucleation and the evolution of InAs/GaAs (001) Quantum Dots

Step erosion during nucleation of InAsGaAs (001) quantum dots

Placidi, E.
Sessi, V.
ARCIPRETE, FABRIZIO
FANFONI, MASSIMO
PATELLA, FULVIA
BALZAROTTI, ADALBERTO

January 2005

We have investigated, by means of atomic force microscopy, the complete evolution of InAs/GaAs(001) ...

InAs quantum dot and wetting layer formation in GaAs and AlAs analyzed by cross-sectional scanning tunneling microscopy

Offermans, P.
Koenraad, P.M.
Wolter, J.H.
Pierz, K.
Roy, M.
Maksym, P.A.

January 2004

Cross-sectional scanning-tunneling microscopy (X-STM) has been used to study the formation of self-a...

Structural study of the InAs quantum-dot nucleation on GaAs(001)

PATELLA, FULVIA
ARCIPRETE, FABRIZIO
FANFONI, MASSIMO
SGARLATA, ANNA
BALZAROTTI, ADALBERTO
Nufris, S
Placidi, E

January 2003

We have investigated by atomic force microscopy subsequent stages of the heteroepitaxy of InAs on Ga...

The influence of the wetting layer morphology on the nucleation and the evolution of InAs/GaAs (001) Quantum Dots

Bute, O
Cimpoca, GV
Placidi, E
ARCIPRETE, FABRIZIO
PATELLA, FULVIA
FANFONI, MASSIMO
BALZAROTTI, ADALBERTO

January 2007

We present an impression of the present state of knowledge on the formation, via a modified Stransky...

InAs wetting layer and quantum dots on GaAs(001) surface studied by in situ STM placed inside MBE growth chamber and kMC simulations based on first-principles calculations

Tsukamoto, Shiro
Bell, Gavin R.
Ishii, Akira
Arakawa, Yasuhiko

April 2007

Dynamic images of InAs quantum dots (QDs) formation are obtained using a unique scanning tunneling m...

Early stages of nucleation in the InAs/GaAs(001) heteroepitaxial growth

Nufris, SM
Placidi, E
ARCIPRETE, FABRIZIO
PATELLA, FULVIA
FANFONI, MASSIMO
SGARLATA, ANNA
BALZAROTTI, ADALBERTO

January 2004

We have analysed by atomic force microscopy the InAs on GaAs(001) system prepared by molecular beam ...

Anomalous coarsening of self-assembled InAs quantum dots on vicinal GaAs (100) substrates

Liang S
Zhu HL
Ye XL
Pan JQ
Zhao LJ
Wang W
Liang S Chinese Acad Sci Inst Semicond Key Lab Semicond Mat Sci Beijing 100083 Peoples R China.

January 2009

The formation process of InAs quantum dots (QDs) on vicinal GaAs (1 0 0) substrates is studied by at...

Morphology of self-assembled InAs quantum dots on GaAs(001)

Arciprete F.
Patella F.
Fanfoni M.
Nufris S.
Placidi E.
Schiumarini D.
Balzarotti A.

January 2002

We have followed by Atomic Force Microscopy (AFM) the epitaxial growth of InAs on GaAs(001) starting...

Step erosion during nucleation of InAsGaAs (001) quantum dots

Placidi, E.
Sessi, V.
ARCIPRETE, FABRIZIO
FANFONI, MASSIMO
PATELLA, FULVIA
BALZAROTTI, ADALBERTO

January 2005

We have investigated, by means of atomic force microscopy, the complete evolution of InAs/GaAs(001) ...

InAs quantum dot and wetting layer formation in GaAs and AlAs analyzed by cross-sectional scanning tunneling microscopy

Offermans, P.
Koenraad, P.M.
Wolter, J.H.
Pierz, K.
Roy, M.
Maksym, P.A.

January 2004

Cross-sectional scanning-tunneling microscopy (X-STM) has been used to study the formation of self-a...

Structural study of the InAs quantum-dot nucleation on GaAs(001)

PATELLA, FULVIA
ARCIPRETE, FABRIZIO
FANFONI, MASSIMO
SGARLATA, ANNA
BALZAROTTI, ADALBERTO
Nufris, S
Placidi, E

January 2003

We have investigated by atomic force microscopy subsequent stages of the heteroepitaxy of InAs on Ga...

The influence of the wetting layer morphology on the nucleation and the evolution of InAs/GaAs (001) Quantum Dots

Bute, O
Cimpoca, GV
Placidi, E
ARCIPRETE, FABRIZIO
PATELLA, FULVIA
FANFONI, MASSIMO
BALZAROTTI, ADALBERTO

January 2007

We present an impression of the present state of knowledge on the formation, via a modified Stransky...

InAs wetting layer and quantum dots on GaAs(001) surface studied by in situ STM placed inside MBE growth chamber and kMC simulations based on first-principles calculations

Tsukamoto, Shiro
Bell, Gavin R.
Ishii, Akira
Arakawa, Yasuhiko

April 2007

Dynamic images of InAs quantum dots (QDs) formation are obtained using a unique scanning tunneling m...

Early stages of nucleation in the InAs/GaAs(001) heteroepitaxial growth

Nufris, SM
Placidi, E
ARCIPRETE, FABRIZIO
PATELLA, FULVIA
FANFONI, MASSIMO
SGARLATA, ANNA
BALZAROTTI, ADALBERTO

January 2004

We have analysed by atomic force microscopy the InAs on GaAs(001) system prepared by molecular beam ...

Anomalous coarsening of self-assembled InAs quantum dots on vicinal GaAs (100) substrates

Liang S
Zhu HL
Ye XL
Pan JQ
Zhao LJ
Wang W
Liang S Chinese Acad Sci Inst Semicond Key Lab Semicond Mat Sci Beijing 100083 Peoples R China.

January 2009

The formation process of InAs quantum dots (QDs) on vicinal GaAs (1 0 0) substrates is studied by at...

Morphology of self-assembled InAs quantum dots on GaAs(001)

Arciprete F.
Patella F.
Fanfoni M.
Nufris S.
Placidi E.
Schiumarini D.
Balzarotti A.

January 2002

We have followed by Atomic Force Microscopy (AFM) the epitaxial growth of InAs on GaAs(001) starting...

Step erosion during nucleation of InAsGaAs (001) quantum dots

Placidi, E.
Sessi, V.
ARCIPRETE, FABRIZIO
FANFONI, MASSIMO
PATELLA, FULVIA
BALZAROTTI, ADALBERTO

January 2005

We have investigated, by means of atomic force microscopy, the complete evolution of InAs/GaAs(001) ...

InAs quantum dot and wetting layer formation in GaAs and AlAs analyzed by cross-sectional scanning tunneling microscopy

Offermans, P.
Koenraad, P.M.
Wolter, J.H.
Pierz, K.
Roy, M.
Maksym, P.A.

January 2004

Cross-sectional scanning-tunneling microscopy (X-STM) has been used to study the formation of self-a...

Structural study of the InAs quantum-dot nucleation on GaAs(001)

PATELLA, FULVIA
ARCIPRETE, FABRIZIO
FANFONI, MASSIMO
SGARLATA, ANNA
BALZAROTTI, ADALBERTO
Nufris, S
Placidi, E

January 2003

We have investigated by atomic force microscopy subsequent stages of the heteroepitaxy of InAs on Ga...

The influence of the wetting layer morphology on the nucleation and the evolution of InAs/GaAs (001) Quantum Dots

Abstract

Extracted data

The influence of the wetting layer morphology on the nucleation and the evolution of InAs/GaAs (001) Quantum Dots

Abstract

Extracted data

Topics

Related items

Topics

Related items