We present results on the polarization dependence of Surface Differential Reflectivity in GaP(1 1 0) and GaAs(GaAs(1 1 0) surfaces. GaP(1 1 0) shows a transition at 2.8 eV which is excited only with the light electric vector parallel to the [1 1 0] direction; for the optical transition above 3.0 eV there is not any marked polarization dependence. GaAs(1 1 0) shows optical transitions between 2.6 and 4.0 eV which have a weak dependence on light polarization. © 1987
For highly divergent emission of broad-area vertical-cavity surface-emitting lasers, a rotation of t...
We demonstrate that optical anisotropy due to the presence of inevitable surface in metal-dielectric...
The experimental results of surface differential reflectivity and reflectance anisotropy spectroscop...
We present results on the polarization dependence of Surface Differential Reflectivity in GaP(1 1 0)...
The optical properties of GaAs(110) and GaP(110) surfaces are studied by means of self-consistent lo...
We have investigated, both experimentally and theoretically, the optical properties of an epitaxial ...
We compute the optical properties of semiconductor surfaces starting from the self-consistent electr...
A method for the calculation of the surface local-field effect on reflectance has been developed. It...
We have developed a theory of photoemission from III-V compound semiconductors within the one-step m...
We present surface-differential-reflectivity results on the polarization dependence of optical trans...
We present a determination of the complex dielectric function of si(111) 2 multiplied by 1, GaAs(110...
We have investigated the temperature dependence of the reflectance anisotropy spectra of clean GaAs(...
An accurate study of the optical properties of GaAs thin layers in the excitonic absorption region, ...
The development and the state of the art of surface methods based on the reflection of light are bri...
The optical properties of the GaAs(110) surface are studied by means of self-consistent local-densit...
For highly divergent emission of broad-area vertical-cavity surface-emitting lasers, a rotation of t...
We demonstrate that optical anisotropy due to the presence of inevitable surface in metal-dielectric...
The experimental results of surface differential reflectivity and reflectance anisotropy spectroscop...
We present results on the polarization dependence of Surface Differential Reflectivity in GaP(1 1 0)...
The optical properties of GaAs(110) and GaP(110) surfaces are studied by means of self-consistent lo...
We have investigated, both experimentally and theoretically, the optical properties of an epitaxial ...
We compute the optical properties of semiconductor surfaces starting from the self-consistent electr...
A method for the calculation of the surface local-field effect on reflectance has been developed. It...
We have developed a theory of photoemission from III-V compound semiconductors within the one-step m...
We present surface-differential-reflectivity results on the polarization dependence of optical trans...
We present a determination of the complex dielectric function of si(111) 2 multiplied by 1, GaAs(110...
We have investigated the temperature dependence of the reflectance anisotropy spectra of clean GaAs(...
An accurate study of the optical properties of GaAs thin layers in the excitonic absorption region, ...
The development and the state of the art of surface methods based on the reflection of light are bri...
The optical properties of the GaAs(110) surface are studied by means of self-consistent local-densit...
For highly divergent emission of broad-area vertical-cavity surface-emitting lasers, a rotation of t...
We demonstrate that optical anisotropy due to the presence of inevitable surface in metal-dielectric...
The experimental results of surface differential reflectivity and reflectance anisotropy spectroscop...