Simultaneous dual-band high efficiency harmonic tuned power amplifier in GaN technology
- COLANTONIO, PAOLO
- GIANNINI, FRANCO
- GIOFRE', ROCCO
- PIAZZON, LUCA
Publication date
October 2007
DOI Publisher
Institute of Electrical and Electronics Engineers (IEEE)Abstract
In this contribution for the first time the design of a simultaneous dual band high efficiency harmonic tuned power amplifier is presented. The active device used is a GaN HEMT with 1mm of gate periphery. The realised amplifier operates at 2.45Ghz and 3.3GHz, and the measured results shown a drain efficiency of 53% and 46%, with an output power of 33dBm and 32.5dBm at the two bandwidths. A zero transmission condition has been obtained, resulting in a measured value of S21 lower than -15dB at 2.8GHz
Add to ORKG