In the present work HCl-isopropanol treated and vacuum annealed InP(001) surfaces were studied by means of low-energy electron diffraction (LEED), soft X-ray photoemission (SXPS), and reflectance anisotropy (RAS) spectroscopies. The treatment removes the natural oxide and leaves on the surface a physisorbed overlayer containing InClx and phosphorus. Annealing at 230 C induces desorption of InClx overlayer and reveals a P-rich (2 x 1) surface. Subsequent annealing at higher temperature induces In-rich (2 x 4) surface. The structural properties of chemically prepared InP(001) surfaces were found to be similar to those obtained by decapping of As/P-capped epitaxial layers. (c) 2006 Elsevier B.V. All rights reserved
Although InP is widely used in optoelectronic applications, little is known about the surface chemi...
The surface chemistry and the interface formation during the initial stages of the atomic layer depo...
In this work we investigate the role of surface steps during annealing of InP(001) surfaces and nucl...
In the present work HCl-isopropanol treated and vacuum annealed InP(001) surfaces were studied by me...
In the present work HCl-isopropanol treated and vacuum annealed InP(001) surfaces were studied by me...
Metalorganic vapor phase epitaxy grown InP samples capped with a protective As/P double layer were u...
Reflection anisotropy spectroscopy (RAS) and reflection high-energy electron diffraction (RHEED) wer...
A simple treatment method using HCl/isopropanol solutions is given for preparation of high-quality I...
In this work synchrotron radiation photoemission spectroscopy SRPES is used to study InP surfaces ...
Synthetic routes have been developed that allow attachment of a variety of functional groups to etch...
A combined study, using reflection high energy electron diffraction (RHEED) and reflection anisotrop...
The dependence of the InP(001) surface reconstruction on the chemical potentials of its constituents...
[[abstract]]Traditionally, the chemical composition of surfaces prepared by various chemical, therma...
[[abstract]]The cleaning and etching of the InP(100) surface by chlorine gas is investigated using s...
Core-level photoemission spectroscopy and theoretical predictions of structure and spectra are used ...
Although InP is widely used in optoelectronic applications, little is known about the surface chemi...
The surface chemistry and the interface formation during the initial stages of the atomic layer depo...
In this work we investigate the role of surface steps during annealing of InP(001) surfaces and nucl...
In the present work HCl-isopropanol treated and vacuum annealed InP(001) surfaces were studied by me...
In the present work HCl-isopropanol treated and vacuum annealed InP(001) surfaces were studied by me...
Metalorganic vapor phase epitaxy grown InP samples capped with a protective As/P double layer were u...
Reflection anisotropy spectroscopy (RAS) and reflection high-energy electron diffraction (RHEED) wer...
A simple treatment method using HCl/isopropanol solutions is given for preparation of high-quality I...
In this work synchrotron radiation photoemission spectroscopy SRPES is used to study InP surfaces ...
Synthetic routes have been developed that allow attachment of a variety of functional groups to etch...
A combined study, using reflection high energy electron diffraction (RHEED) and reflection anisotrop...
The dependence of the InP(001) surface reconstruction on the chemical potentials of its constituents...
[[abstract]]Traditionally, the chemical composition of surfaces prepared by various chemical, therma...
[[abstract]]The cleaning and etching of the InP(100) surface by chlorine gas is investigated using s...
Core-level photoemission spectroscopy and theoretical predictions of structure and spectra are used ...
Although InP is widely used in optoelectronic applications, little is known about the surface chemi...
The surface chemistry and the interface formation during the initial stages of the atomic layer depo...
In this work we investigate the role of surface steps during annealing of InP(001) surfaces and nucl...