The interaction between uncompensated pinned magnetic moments within an antiferromagnetic (AFM) layer and an adjacent ferromagnetic (FM) layer responsible for the existence of exchange bias is explored in epitaxially grown trilayers of the form FM2/AFM/FM1 on Cu3Au(0 0 1) where FM1 is ~12 atomic monolayers (ML) Ni, FM2 is 21–25 ML Ni, and AFM is 27 ML or 50 ML Ni~25Mn~75. Field cooling for parallel or antiparallel alignment of the out-of-plane magnetizations of the two FM layers does not make a difference for the temperature-dependent coercivity (H C), magnitude of exchange bias field (H eb), AFM ordering temperature (T AFM), and blocking temperature for exchange bias (T b). We explain this by a model in which the uncompensated pinned magne...
Exchange coupled bilayers of soft and hard ferromagnetic thin films show remarkable analogies to con...
This article may be downloaded for personal use only. Any other use requires prior permission of the...
Antiferromagnetic spintronic devices could offer ultrafast dynamics and a higher data density than c...
The cooling field dependence of exchange bias field in ferromagnet / antiferromagnet (FM/AF) multila...
The exchange bias of antiferromagnetic-ferromagnetic (AFM-FM) bilayers is found to be strongly depen...
The cooling field dependence of the exchange bias field in ferromagnet/antiferromagnet (FM/AF) multi...
The origin of the exchange bias (EB) effect has been traced back to the existence of pinned uncompen...
This study offers an explanation for the occurrence of magnetization exchange bias in antiferromagne...
The interest towards antiferromagnetic (AFM) materials is continuously increasing mainly because of ...
Interfacial proximity effects in antiferromagnetic/ferromagnetic (AFM/FM) bilayers control the excha...
When a ferromagnet/antiferromagnet (FM/AF) bilayer is cooled below the Neel temperature TN& lt;/...
Spin valve devices are composed by two magnetic (FM) regions separated by a nonmagnetic spacer: one ...
This article may be downloaded for personal use only. Any other use requires prior permission of the...
A theoretical examination of the properties of the exchange bias phenomenon for sandwich FM/AFM/FM s...
Antiferromagnetic spintronic devices have the potential to greatly outperform conventional ferromagn...
Exchange coupled bilayers of soft and hard ferromagnetic thin films show remarkable analogies to con...
This article may be downloaded for personal use only. Any other use requires prior permission of the...
Antiferromagnetic spintronic devices could offer ultrafast dynamics and a higher data density than c...
The cooling field dependence of exchange bias field in ferromagnet / antiferromagnet (FM/AF) multila...
The exchange bias of antiferromagnetic-ferromagnetic (AFM-FM) bilayers is found to be strongly depen...
The cooling field dependence of the exchange bias field in ferromagnet/antiferromagnet (FM/AF) multi...
The origin of the exchange bias (EB) effect has been traced back to the existence of pinned uncompen...
This study offers an explanation for the occurrence of magnetization exchange bias in antiferromagne...
The interest towards antiferromagnetic (AFM) materials is continuously increasing mainly because of ...
Interfacial proximity effects in antiferromagnetic/ferromagnetic (AFM/FM) bilayers control the excha...
When a ferromagnet/antiferromagnet (FM/AF) bilayer is cooled below the Neel temperature TN& lt;/...
Spin valve devices are composed by two magnetic (FM) regions separated by a nonmagnetic spacer: one ...
This article may be downloaded for personal use only. Any other use requires prior permission of the...
A theoretical examination of the properties of the exchange bias phenomenon for sandwich FM/AFM/FM s...
Antiferromagnetic spintronic devices have the potential to greatly outperform conventional ferromagn...
Exchange coupled bilayers of soft and hard ferromagnetic thin films show remarkable analogies to con...
This article may be downloaded for personal use only. Any other use requires prior permission of the...
Antiferromagnetic spintronic devices could offer ultrafast dynamics and a higher data density than c...