The results of measurements of the dielectric constant of TlGaSe2 in the temperature range of successive phase transitions in various regimes, including the measurements after annealing the sample at a fixed temperature in the incommensurate phase are presented. A noticeable influence of the sample prehistory on the dielectric behavior of TlGaSe2 has been revealed. Peculiarities of the anomalies in the temperature dependence of the dielectric constant corresponding to structural phase transitions at the temperatures of 108 K and 115 K are discussed. It is suggested that these anomalies can be interpreted as successive lock-in commensurate transitions due to incommensurate structures appearing at 120 K and 242 K respectively. (c) 2005 Elsevi...
Journal ArticleWe report on the first NMR study of phase transitions and incommensurability in the l...
The dielectric properties of TlInSe2 grown by direct fusion of their constituent elements were studi...
Charge trapping centers in TlGaSe2 single crystals were investigated by the use of thermally stimula...
The results of measurements of the time dependences of the dielectric constant of TlGaSe2 in the com...
The results of measurements of the dielectric constant of TlGaSe2 in temperature range of successive...
The dielectric measurements of the layered crystal were studied in temperature range of successive p...
The effects of physical aging on the dielectric constant of TlGaSe2 layered ferroelectric crystal we...
TlGaSe2 layered crystals were characterized with dielectric spectroscopy measurements. We have studi...
The frequency and time dependence of the ac conductivity were measured within incommensurate phase i...
In doped TlGaSe2 crystals the phase transitions at low temperatures were observed using admittance a...
Peculiarities of the temperature behaviour of the dielectric susceptibility of TlInS2 in the tempera...
We report on the first NMR study of phase transitions and incommensurability in the layered semicond...
The spectral distribution of photocurrent (PC) of TlGaSe2 single crystals in the range of wavelength...
In the doped crystals TlGaSe2 and TlInS2, using method of temperature dependencies of DC resistance ...
Absorption spectra of thin layers of TlGaSe2 crystals are used to study the energy gap and the inter...
Journal ArticleWe report on the first NMR study of phase transitions and incommensurability in the l...
The dielectric properties of TlInSe2 grown by direct fusion of their constituent elements were studi...
Charge trapping centers in TlGaSe2 single crystals were investigated by the use of thermally stimula...
The results of measurements of the time dependences of the dielectric constant of TlGaSe2 in the com...
The results of measurements of the dielectric constant of TlGaSe2 in temperature range of successive...
The dielectric measurements of the layered crystal were studied in temperature range of successive p...
The effects of physical aging on the dielectric constant of TlGaSe2 layered ferroelectric crystal we...
TlGaSe2 layered crystals were characterized with dielectric spectroscopy measurements. We have studi...
The frequency and time dependence of the ac conductivity were measured within incommensurate phase i...
In doped TlGaSe2 crystals the phase transitions at low temperatures were observed using admittance a...
Peculiarities of the temperature behaviour of the dielectric susceptibility of TlInS2 in the tempera...
We report on the first NMR study of phase transitions and incommensurability in the layered semicond...
The spectral distribution of photocurrent (PC) of TlGaSe2 single crystals in the range of wavelength...
In the doped crystals TlGaSe2 and TlInS2, using method of temperature dependencies of DC resistance ...
Absorption spectra of thin layers of TlGaSe2 crystals are used to study the energy gap and the inter...
Journal ArticleWe report on the first NMR study of phase transitions and incommensurability in the l...
The dielectric properties of TlInSe2 grown by direct fusion of their constituent elements were studi...
Charge trapping centers in TlGaSe2 single crystals were investigated by the use of thermally stimula...