Device modeling and simulation studies of CdS/ZnxCd1-x Te thin film solar cell have been carried out. A variety of graded band gap structures are examined. Incorporation of back electron reflector layer to improve open circuit voltage and carrier collection of CdTe solar cell was investigated. Device physics and performance determining parameters for different band gap profiles were analyzed. Based on simulation results, an optimal graded band gap structure for CdS/ZnxCd 1-xTe solar cell is proposed. Performance of optimally graded band gap cell is superior to that of uniform bandgap cell
Thin film solar cells with a band gap graded in the thickness direction were prepared by vacuum ev...
International audienceTo improve CdS/CdTe cell/module efficiencies, CdS window layer thinning is com...
AbstractThis work concerns the study and the simulation of a structure containing II-VI semiconducto...
Device modeling and simulation studies of CdS/ZnxCd1-xTe thin film solar cell have been carried out....
Using computer simulations, the performance of several CdTe based photovoltaic structures has been s...
At present most of II–VI semiconductor based solar cells use the CdTe material as an absorber film. ...
At present most of II–VI semiconductor based solar cells use the CdTe material as an absorber film. ...
At present most of II–VI semiconductor based solar cells use the CdTe material as an absorber film. ...
Currently thin film solar cells have efficiencies in the range of 16-18%. Higher efficiencies of 20%...
Currently thin film solar cells have efficiencies in the range of 16-18%. Higher efficiencies of 20%...
Thin film solar cells with a band gap graded inthe thickness direction were prepared by vacuumevapor...
Thin film solar cells with a band gap graded inthe thickness direction were prepared by vacuumevapor...
Device simulation is used to investigate the current-voltage efficiency performance in CdTe/CdS phot...
AbstractCdTe is the best suited semiconductor for solar cells due to its band gap value 1.47 eV whic...
This thesis submitted in partial fulfillment of the requirements for the degree of Bachelor of Scien...
Thin film solar cells with a band gap graded in the thickness direction were prepared by vacuum ev...
International audienceTo improve CdS/CdTe cell/module efficiencies, CdS window layer thinning is com...
AbstractThis work concerns the study and the simulation of a structure containing II-VI semiconducto...
Device modeling and simulation studies of CdS/ZnxCd1-xTe thin film solar cell have been carried out....
Using computer simulations, the performance of several CdTe based photovoltaic structures has been s...
At present most of II–VI semiconductor based solar cells use the CdTe material as an absorber film. ...
At present most of II–VI semiconductor based solar cells use the CdTe material as an absorber film. ...
At present most of II–VI semiconductor based solar cells use the CdTe material as an absorber film. ...
Currently thin film solar cells have efficiencies in the range of 16-18%. Higher efficiencies of 20%...
Currently thin film solar cells have efficiencies in the range of 16-18%. Higher efficiencies of 20%...
Thin film solar cells with a band gap graded inthe thickness direction were prepared by vacuumevapor...
Thin film solar cells with a band gap graded inthe thickness direction were prepared by vacuumevapor...
Device simulation is used to investigate the current-voltage efficiency performance in CdTe/CdS phot...
AbstractCdTe is the best suited semiconductor for solar cells due to its band gap value 1.47 eV whic...
This thesis submitted in partial fulfillment of the requirements for the degree of Bachelor of Scien...
Thin film solar cells with a band gap graded in the thickness direction were prepared by vacuum ev...
International audienceTo improve CdS/CdTe cell/module efficiencies, CdS window layer thinning is com...
AbstractThis work concerns the study and the simulation of a structure containing II-VI semiconducto...