Atomic surrounding of Co implanted in AlN at high energy

AlN bulk ceramic has been implanted with energetic Co ions. In order to accurately characterise the atomic surrounding of the implanted ions, X-ray absorption measurements were carried out at 80 K in the fluorescence mode at the Co K edge in the as-implanted and annealed states. Simulation of the EXAFS oscillations allowed us to identify a first stage where Co is inserted in the AlN matrix followed by a second stage where Co precipitates form.Fil: Traverse, Agnès. Lure, Universidad Paris-sud; FranciaFil: Delobbe, Anne. Lure, Universidad Paris-sud; FranciaFil: Zanghi, Didier. Lure, Universidad Paris-sud; FranciaFil: Rentería, Mario. Lure, Universidad Paris-sud; Francia. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - La Plata. Instituto de Física La Plata. Universidad Nacional de La Plata. Facultad de Ciencias Exactas. Instituto de Física La Plata; ArgentinaFil: Gailhanou, Marc. Lure, Universidad Paris-sud; Franci