Enhanced thermoelectric response in the fractional quantum Hall effect

We study the linear thermoelectric response of a quantum dot embedded in a constriction of a quantum Hall bar with fractional filling factors ν=1/m within Laughlin series. We calculate the figure of merit ZT for the maximum efficiency at a fixed temperature difference. We find a significant enhancement of this quantity in the fractional filling in relation to the integer-filling case, which is a direct consequence of the fractionalization of the electron in the fractional quantum Hall state. We present simple theoretical expressions for the Onsager coefficients at low temperatures, which explicitly show that ZT and the Seebeck coefficient increase with m.Fil: Roura Bas, Pablo Gines. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Comisión Nacional de Energía Atómica. Centro Atómico Constituyentes; ArgentinaFil: Arrachea, Liliana del Carmen. Freie Universität Berlin; Alemania. Universidad Nacional de San Martín; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; ArgentinaFil: Fradkin, Eduardo. University of Illinois at Urbana; Estados Unido