This paper presents a voltage-controlled multistage gate driver topology for delay time minimization that improves the converter output voltage quality while supplying a motor load. Three gate driver topologies for SiC MOSFETs are compared based on their dead time requirement in a bridge leg converter. Experimental results of the gate driver delay times are reported and are used as input to a simulated motor drive application. Results show that turn-off delay times can be reduced by up to 74 % for the multistage driver compared to the conventional counterpart when the rate of change for the converter voltage output is limited to 10 V/ns. Furthermore, minimizing the dead time increases the linearity region of the output voltage from the conv...
In the present time, electrical power conversion is performed more and more widely using fully-contr...
This work presents a study of the influence of different gate driver circuits on the switching behav...
This paper investigates the influence of current-source and voltage-source gate driver on the switch...
This paper presents a driver topology intended for WBG devices with the goal of improving the switch...
A gate driver approach is presented for the reduction of turn-on losses in hard switching applicatio...
Dead-time is introduced between the gating signals to the top and bottom switches in a voltage sourc...
Silicon carbide (SiC) devices can significantly increase power efficiency, temperature reliability, ...
High switching-speed Silicon Carbide Metal-Oxide-Semiconductor Field-Effect Transistor (SiC MOSFET) ...
This work introduces a novel gate driver for use with wide-bandgap devices in high-power, high-preci...
Most intelligent gate drivers designed for new state of the art WBG devices typically only focus on ...
The trend in power electronic applications is to reach higher power density and higher efficiency. C...
Modern power transistors are able to switch at very high transition speed, which can cause EMC viola...
This paper proposes an optimized switching strategy (OSS) based on a silicon carbide (SiC) MOSFET ga...
SIC Mosfet plays a huge role in power converters and it works under high voltage, high switching fre...
In high frequency applications of silicon carbide (SiC) MOSFET, it is easy to be affected by parasit...
In the present time, electrical power conversion is performed more and more widely using fully-contr...
This work presents a study of the influence of different gate driver circuits on the switching behav...
This paper investigates the influence of current-source and voltage-source gate driver on the switch...
This paper presents a driver topology intended for WBG devices with the goal of improving the switch...
A gate driver approach is presented for the reduction of turn-on losses in hard switching applicatio...
Dead-time is introduced between the gating signals to the top and bottom switches in a voltage sourc...
Silicon carbide (SiC) devices can significantly increase power efficiency, temperature reliability, ...
High switching-speed Silicon Carbide Metal-Oxide-Semiconductor Field-Effect Transistor (SiC MOSFET) ...
This work introduces a novel gate driver for use with wide-bandgap devices in high-power, high-preci...
Most intelligent gate drivers designed for new state of the art WBG devices typically only focus on ...
The trend in power electronic applications is to reach higher power density and higher efficiency. C...
Modern power transistors are able to switch at very high transition speed, which can cause EMC viola...
This paper proposes an optimized switching strategy (OSS) based on a silicon carbide (SiC) MOSFET ga...
SIC Mosfet plays a huge role in power converters and it works under high voltage, high switching fre...
In high frequency applications of silicon carbide (SiC) MOSFET, it is easy to be affected by parasit...
In the present time, electrical power conversion is performed more and more widely using fully-contr...
This work presents a study of the influence of different gate driver circuits on the switching behav...
This paper investigates the influence of current-source and voltage-source gate driver on the switch...