Boron Carbide Hetero-isomeric Device Fabrication by PECVD from Isomeric Precursors Ortho-carborane and Meta-carborane

Boron carbide semiconductor devices have a range of applications. As a neutron voltaic, the device could be used to power deep-space exploratory missions. Instead of the passive dosimetry systems used today, an active solid-state neutron detector could immediately alert workers about radiation hazards. The focus of this thesis is the fabrication of an amorphous boron carbide device by plasma enhanced chemical vapor deposition (PECVD). Isomeric carborane precursors are used to synthesize the amorphous p and n-type layers. Improved operation and handling of the PECVD reactor chamber resulted in a stable plasma capable of increased deposition rate. Therefore, quality and purity of the deposited boron carbide films also increased. X-ray photoelectron spectroscopy (XPS), spectroscopic ellipsometry, and I-V curve measurements were used to characterize the material and electronic properties of the films and devices. Furthermore, metallization and the creation of ohmic contacts with both the n-type and p-type layers were investigated Advisor: Natale Iann