A fully integrated cross-coupled charge pump circuit with four-clock signals and a new method of body bias have been proposed. The new clock scheme eliminates all of the reversion power loss and reduces the ripple voltage. In addition, the largest voltage differences between the terminals of all transistors do not exceed the supply voltage. We have also solved the gate-oxide overstress problem in the conventional charge pump circuits and enhanced the reliability. The proposed charge pump circuit has been simulated using Spectre and in the TSMC 0.18um CMOS process. The simulation results show that the maximum voltage conversion efficiency of the new 3-stage cross-coupled circuit with an input voltage of 1.5V is 99.8%. Moreover, the output ri...
A low power CMOS charge pump (CP) is proposed utilizing a new combination of charge transferring swi...
Charge pump is circuit that produces voltage higher than supply voltage or negative voltage. Today, ...
In this paper, a power-efficient two-phase p-channel metal-oxide-semiconductor field-effect transist...
© Allerton Press, Inc. 2018A fully integrated cross-coupled charge pump circuit for boosting dc-to-d...
This document is the Accepted Manuscript version of the following article: Minglin Ma, Xinglong Cai,...
In the last years the gate-oxide overstress has become a great concern for CMOS circuits and even mo...
Area-efficient 4X charge pumps based on a cross-coupled structure that re-uses the 2X output to save...
The demand of portable consumer electronic devices is skyrocketing day-by-day. Such modern integrate...
This paper presents utility for the design of the cross-coupled charge pump, which is used for suppl...
International audienceIn this paper, a regulated charge sharing based charge pump with boosted trans...
Abstract—A new charge pump circuit with consideration of gate-oxide reliability is designed with two...
In this paper, a novel switching-capacitor DC-DC voltage converter with higher efficiency will be pr...
8th IEEE International Memory Workshop (IMW), Paris, FRANCE, MAY 15-18, 2016International audiencea ...
A hybrid charge pump was developed in a 0.13- $\mu \text{m}$ Bipolar-CMOS-DMOS (BCD) process which ...
Monolithic integration of step-up DC-DC converters used to be one of the largest challenges in high ...
A low power CMOS charge pump (CP) is proposed utilizing a new combination of charge transferring swi...
Charge pump is circuit that produces voltage higher than supply voltage or negative voltage. Today, ...
In this paper, a power-efficient two-phase p-channel metal-oxide-semiconductor field-effect transist...
© Allerton Press, Inc. 2018A fully integrated cross-coupled charge pump circuit for boosting dc-to-d...
This document is the Accepted Manuscript version of the following article: Minglin Ma, Xinglong Cai,...
In the last years the gate-oxide overstress has become a great concern for CMOS circuits and even mo...
Area-efficient 4X charge pumps based on a cross-coupled structure that re-uses the 2X output to save...
The demand of portable consumer electronic devices is skyrocketing day-by-day. Such modern integrate...
This paper presents utility for the design of the cross-coupled charge pump, which is used for suppl...
International audienceIn this paper, a regulated charge sharing based charge pump with boosted trans...
Abstract—A new charge pump circuit with consideration of gate-oxide reliability is designed with two...
In this paper, a novel switching-capacitor DC-DC voltage converter with higher efficiency will be pr...
8th IEEE International Memory Workshop (IMW), Paris, FRANCE, MAY 15-18, 2016International audiencea ...
A hybrid charge pump was developed in a 0.13- $\mu \text{m}$ Bipolar-CMOS-DMOS (BCD) process which ...
Monolithic integration of step-up DC-DC converters used to be one of the largest challenges in high ...
A low power CMOS charge pump (CP) is proposed utilizing a new combination of charge transferring swi...
Charge pump is circuit that produces voltage higher than supply voltage or negative voltage. Today, ...
In this paper, a power-efficient two-phase p-channel metal-oxide-semiconductor field-effect transist...