The structural, electronic and magnetic properties of interfaces between epitaxial La0.7Sr0.3MnO3 and PbTiO3 have been explored via atomic resolution transmission electron microscopy of a functional multiferroic tunnel junction. Measurements of the polar displacements and octahedral tilting show the competition between the two distortions at the interface, and demonstrate a strong dependence on the polarisation orientation. Density functional theory provides information on the electronic and magnetic properties, where the interface termination plays a crucial role in the screening mechanisms
Thin-film oxide heterostructures show great potential for use in spintronic memories, where electron...
A quasi-two dimensional electron gas (2DEG) in oxide heterostructures such as LaAlO3/SrTiO3 has uniq...
The development of interface-based magnetoelectric devices necessitates an understanding of polariza...
The structural, electronic, and magnetic properties of interfaces between epitaxial La0.7Sr0.3MnO3 a...
International audienceThe effects of the bonding mechanism and band alignment in a ferroelectric (FE...
The development of energy-efficient nanoelectronics based on ferroelectrics is hampered by a notorio...
The development of energy-efficient nanoelectronics based on ferroelectrics is hampered by a notorio...
The development of energy-efficient nanoelectronics based on ferroelectrics is hampered by a notorio...
Thin-film oxide heterostructures show great potential for use in spintronic memories, where electron...
Thin-film oxide heterostructures show great potential for use in spintronic memories, where electron...
Ferroelectric materials are characterized by a reversible spontaneous electric polarization in the a...
Ferroelectric materials are characterized by a reversible spontaneous electric polarization in the a...
The possibility of controlling the interfacial properties of artificial oxide heterostructures is st...
Utilization of the switchable spontaneous polarization of nanometer scale ferroelectric materials of...
A quasi-two dimensional electron gas (2DEG) in oxide heterostructures such as LaAlO3/SrTiO3 has uniq...
Thin-film oxide heterostructures show great potential for use in spintronic memories, where electron...
A quasi-two dimensional electron gas (2DEG) in oxide heterostructures such as LaAlO3/SrTiO3 has uniq...
The development of interface-based magnetoelectric devices necessitates an understanding of polariza...
The structural, electronic, and magnetic properties of interfaces between epitaxial La0.7Sr0.3MnO3 a...
International audienceThe effects of the bonding mechanism and band alignment in a ferroelectric (FE...
The development of energy-efficient nanoelectronics based on ferroelectrics is hampered by a notorio...
The development of energy-efficient nanoelectronics based on ferroelectrics is hampered by a notorio...
The development of energy-efficient nanoelectronics based on ferroelectrics is hampered by a notorio...
Thin-film oxide heterostructures show great potential for use in spintronic memories, where electron...
Thin-film oxide heterostructures show great potential for use in spintronic memories, where electron...
Ferroelectric materials are characterized by a reversible spontaneous electric polarization in the a...
Ferroelectric materials are characterized by a reversible spontaneous electric polarization in the a...
The possibility of controlling the interfacial properties of artificial oxide heterostructures is st...
Utilization of the switchable spontaneous polarization of nanometer scale ferroelectric materials of...
A quasi-two dimensional electron gas (2DEG) in oxide heterostructures such as LaAlO3/SrTiO3 has uniq...
Thin-film oxide heterostructures show great potential for use in spintronic memories, where electron...
A quasi-two dimensional electron gas (2DEG) in oxide heterostructures such as LaAlO3/SrTiO3 has uniq...
The development of interface-based magnetoelectric devices necessitates an understanding of polariza...