International audienceA study of the surface topography and optical characteristics of thin AlN films used as passivating and antireflection coatings deposited on n-GaAs (100) substrates by reactive ion-plasma sputtering is reported. It was found that the process conditions affect the structure and the optical characteristics of the films, which makes it possible to obtain coatings with prescribed parameters. An analysis of the results furnished by ellipsometry and atomic-force microscopy of the surface shows that the refractive index of the films is correlated with the surface structure
Оne of the promising materials in solid state electronics is the AlN compound. A wide range of semic...
Approximately 2.2 μm thick aluminum nitride (AlN) thin films were deposited on silicon and glass sub...
This output describes a technique for fabricating structured coatings using the magnetron sputtering...
Copyright © 2013 N. Matsunami et al. This is an open access article distributed under the Creative C...
This paper studies the optical characteristics of aluminum nitride thin films deposited by reactive ...
In this paper we report experimental results concerning the optical properties of sputtered AlN film...
Polycrystalline aluminum nitride films were deposited by reactive radio frequency magnetron sputteri...
AlN films of thicknesses 670–780 nm were deposited on (1 1 1) silicon wafer, (0 0·1) sapphire, float...
It is well-known that the characteristics of aluminum nitride thin films mainly depend on their morp...
High bandgap materials have recently attracted a lot of interest for their potential application in ...
Study of Aluminum nitride (AlN) thin film deposited on silicon wafer and glass substrates by DC magn...
We report on the investigation of the influence of deposition conditions on structural, morphologica...
A set of AlN thin-films was prepared by reactive magnetron sputtering at room temperature. The purpo...
The growth of AlN by different deposition methods is frequently reported, because of its optoelectro...
Composite thin films of the AlN–Al–V type, grown by magnetron sputtering, were analyzed by several c...
Оne of the promising materials in solid state electronics is the AlN compound. A wide range of semic...
Approximately 2.2 μm thick aluminum nitride (AlN) thin films were deposited on silicon and glass sub...
This output describes a technique for fabricating structured coatings using the magnetron sputtering...
Copyright © 2013 N. Matsunami et al. This is an open access article distributed under the Creative C...
This paper studies the optical characteristics of aluminum nitride thin films deposited by reactive ...
In this paper we report experimental results concerning the optical properties of sputtered AlN film...
Polycrystalline aluminum nitride films were deposited by reactive radio frequency magnetron sputteri...
AlN films of thicknesses 670–780 nm were deposited on (1 1 1) silicon wafer, (0 0·1) sapphire, float...
It is well-known that the characteristics of aluminum nitride thin films mainly depend on their morp...
High bandgap materials have recently attracted a lot of interest for their potential application in ...
Study of Aluminum nitride (AlN) thin film deposited on silicon wafer and glass substrates by DC magn...
We report on the investigation of the influence of deposition conditions on structural, morphologica...
A set of AlN thin-films was prepared by reactive magnetron sputtering at room temperature. The purpo...
The growth of AlN by different deposition methods is frequently reported, because of its optoelectro...
Composite thin films of the AlN–Al–V type, grown by magnetron sputtering, were analyzed by several c...
Оne of the promising materials in solid state electronics is the AlN compound. A wide range of semic...
Approximately 2.2 μm thick aluminum nitride (AlN) thin films were deposited on silicon and glass sub...
This output describes a technique for fabricating structured coatings using the magnetron sputtering...