We present a novel ab initio approach to piezoelectricity. The piezoelectric tensor is given by the stress induced by a homogeneous electric field. The perturbation is treated self-consistently by linear response, thus avoiding both supercells and numerical differentiation. We calculate the piezoelectric constants of none III-V semiconductors: as a by-product we also provide the first systematic study of zone-center phonons, internal strain parameters, effective charges, and dielectric constants. Our results agree very well with experiments where available, and allow predictions where they are not
Linear and quadratic piezoelectric coefficients of wurtzite III-V (GaP, InP, GaAs and InAs) semicond...
International audienceA symmetry-based thermodynamical model of third-order electro-elastic coupling...
The performance of devices fabricated from piezoelectric semiconductors, such as sensors and actuato...
We derive first- and second-order piezoelectric coefficients for the zinc-blende III-V semiconductor...
International audienceWe report first-principle density functional calculations of the spontaneous p...
We address the issue of the composition and strain dependence of the piezoelectric effect in semicon...
We address the issue of strain dependence of piezoelectric effect in semiconductor materials, which ...
We address the issue of the composition and strain dependence of the piezoelectric effect in semicon...
Nonlinear piezoelectricity has recently been detected in strained-layer superlattices where CdTe is ...
We demonstrate the feasibility of ab initio studies of piezoelectricity within an all-electron schem...
This paper constitutes the first part of a work devoted to applications of piezoresistance effects i...
The elastic and dielectric properties of binary III-N wurtzite semiconductors have been investigated...
AbstractLinear and quadratic piezoelectric coefficients of wurtzite III–V (GaP, InP, GaAs and InAs) ...
We present an exact diagonalization approach for atomistic calculation of excitonic properties of se...
Abstract: Strained quantum wells (QWs) grown along the polar axis (1 11) in a zinc-blende semiconduc...
Linear and quadratic piezoelectric coefficients of wurtzite III-V (GaP, InP, GaAs and InAs) semicond...
International audienceA symmetry-based thermodynamical model of third-order electro-elastic coupling...
The performance of devices fabricated from piezoelectric semiconductors, such as sensors and actuato...
We derive first- and second-order piezoelectric coefficients for the zinc-blende III-V semiconductor...
International audienceWe report first-principle density functional calculations of the spontaneous p...
We address the issue of the composition and strain dependence of the piezoelectric effect in semicon...
We address the issue of strain dependence of piezoelectric effect in semiconductor materials, which ...
We address the issue of the composition and strain dependence of the piezoelectric effect in semicon...
Nonlinear piezoelectricity has recently been detected in strained-layer superlattices where CdTe is ...
We demonstrate the feasibility of ab initio studies of piezoelectricity within an all-electron schem...
This paper constitutes the first part of a work devoted to applications of piezoresistance effects i...
The elastic and dielectric properties of binary III-N wurtzite semiconductors have been investigated...
AbstractLinear and quadratic piezoelectric coefficients of wurtzite III–V (GaP, InP, GaAs and InAs) ...
We present an exact diagonalization approach for atomistic calculation of excitonic properties of se...
Abstract: Strained quantum wells (QWs) grown along the polar axis (1 11) in a zinc-blende semiconduc...
Linear and quadratic piezoelectric coefficients of wurtzite III-V (GaP, InP, GaAs and InAs) semicond...
International audienceA symmetry-based thermodynamical model of third-order electro-elastic coupling...
The performance of devices fabricated from piezoelectric semiconductors, such as sensors and actuato...