Investigation of GaAs:Cr Timepix assemblies under high flux irradiation

High resistivity, chromium compensated gallium arsenide (HR-GaAs:Cr) has recently shown to be a promising sensor material for X-ray detectors due to its high resistivity, its fully active volume, the good electron transport properties and good absorption properties for photon energies up to around 40 keV. These properties make this material a favorable candidate for producing sensors for photon counting X-ray imaging detectors. Such detector systems have also gained increasing attention to be used for high flux applications as found at synchrotrons or in medical applications like computed tomography. Whereas other interesting high-Z materials such as CdTe have already been studied under high flux irradiation, the behavior of HR-GaAs:Cr under such conditions has yet to be investigated