Optical rectification and down-conversion of fs pulses into mid-IR and THz range in GaSe1-xSx

Design of top S-doped GaSe growth technology is completed. New methods for characterization of high optical quality crystals are proposed that allowed selection optimally doped crystals. Frequency conversion of fs pulses into 6.5–35 μm and into 0.2–4.5 THz is realized. S-doped crystals demonstrated advantages from 50–70% in the first experiments up to 8.5–15 times in the following experiments depending on experimental conditions. © (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only