In this paper, we investigated the realization of electromagnetically induced transparency (EIT) in a rectangular quantum dot (QD) with a single electron in the presence of probe and control laser fields. The lowest three levels of the confined electron that form ladder and V configuration were chosen. We discussed the dependence of density matrix elements for ladder configuration and for V configuration on detunings of the probe field for various values of quantum dot dimensions. This dependence is discussed for both cases, at cryogenic temperatures when spontaneous emission dominates the relaxation mechanism and at room or higher temperatures when dephasing rate cannot be neglected.U ovom radu je proučavan efekat elektromagnetno induko...
We show that the transparency current plays a central role in setting the temperature dependence of ...
Individual InAs/GaAs quantum dots are studied by micro-photoluminescence. By varying the strength of...
A study of the threshold characteristics of quantum-dot (QD) laser diodes shows how inhomogeneous br...
The present paper analyses the group velocity of light in a ladder-type spherical quantum dot with o...
In this bachelor project, the electron transport within quantum dot transistor devices, whose barrie...
Due to quantum interference, light can transmit through dense atomic media, a phenomenon known as el...
This thesis investigates the weak probe laser pulse propagation through the medium consisting of se...
This paper will review atomic-like phenomena in a semiconductor quantum dot which their size, shape ...
A detailed optical characterisation of (1.3 )InAs quantum-dot-in-well (DWELL) laser structures, is d...
Individual and multi quantum dots of InAs are studied by means of microphotoluminescence in case whe...
Abstract. A theory of the gain and threshold current of a semiconductor quantum dot (QD) laser has b...
We investigate the weak probe pulse propagation through the atomic medium, in the presence of the st...
The effect of different factors on the operating characteristics of a semiconductor quantum dot (QD)...
YÖK Tez No: 650370Bu çalışmada, daha genel üstel perdelenmiş Coulomb (İngilizcesi, MGECSC) potansiye...
A study of the threshold characteristics of quantum-dot (QD) laser diodes shows how inhomogeneous br...
We show that the transparency current plays a central role in setting the temperature dependence of ...
Individual InAs/GaAs quantum dots are studied by micro-photoluminescence. By varying the strength of...
A study of the threshold characteristics of quantum-dot (QD) laser diodes shows how inhomogeneous br...
The present paper analyses the group velocity of light in a ladder-type spherical quantum dot with o...
In this bachelor project, the electron transport within quantum dot transistor devices, whose barrie...
Due to quantum interference, light can transmit through dense atomic media, a phenomenon known as el...
This thesis investigates the weak probe laser pulse propagation through the medium consisting of se...
This paper will review atomic-like phenomena in a semiconductor quantum dot which their size, shape ...
A detailed optical characterisation of (1.3 )InAs quantum-dot-in-well (DWELL) laser structures, is d...
Individual and multi quantum dots of InAs are studied by means of microphotoluminescence in case whe...
Abstract. A theory of the gain and threshold current of a semiconductor quantum dot (QD) laser has b...
We investigate the weak probe pulse propagation through the atomic medium, in the presence of the st...
The effect of different factors on the operating characteristics of a semiconductor quantum dot (QD)...
YÖK Tez No: 650370Bu çalışmada, daha genel üstel perdelenmiş Coulomb (İngilizcesi, MGECSC) potansiye...
A study of the threshold characteristics of quantum-dot (QD) laser diodes shows how inhomogeneous br...
We show that the transparency current plays a central role in setting the temperature dependence of ...
Individual InAs/GaAs quantum dots are studied by micro-photoluminescence. By varying the strength of...
A study of the threshold characteristics of quantum-dot (QD) laser diodes shows how inhomogeneous br...