Hydrogen passivation effects in quaternary solid solutions of InGaAsSb lattice matched to GaSb
- Polyakov A.Y.
- Tunitskaya I.V.
- Druzhinina L.V.
- Govorkov A.V.
- Smirnov N.B.
- Kozhukhova E.A.
- Borodina O.M.
- Milnes A.G.
- Li X.
- Pearton S.J.
- Balmashnov A.A.
DOI Publisher
Elsevier BVAbstract
Hydrogen passivation effects in InAs-related and GaSb-related InGaAsSb layers lattice matched to GaSb have been studied. Strong passivation of shallow acceptors has been observed and is explained by the assumption that hydrogen is a deep donor in these materials. The effects of the hydrogen treatment mode on the passivation efficiency are also discussed, as well as the changes induced by hydrogen treatment in photoluminescence spectra of the layers. © 1994
Add to ORKG