Développement de blocs élémentaires et de circuits dédiés à des applications RFID en technologie silicium microcristallin très basse température

This study deals on the development of components of the first floor of a passive RFID tag. These include an integrated antenna and a rectifying device. The realization of components is based on silicon technology at very low temperature (T<200°C). The first part of this work consists on the realization of a thin film diode-connected transistor and a Schottky diode. These two elements are required to form the rectifier system operating at 13. 56 MHz. Static electrical behavior were investigated to derive their main parameters. The second part is devoted to the use of components, in this case the thin film diodeconnected transistor and Schottky diode with an interface gold / microcrystalline silicon in a rectifying circuit operating at 13. 56 MHz. Their ability to provide a perfectly continuous signal after receipt of a sine wave of frequency 13. 56 MHz is demonstrated. Also in this section the realization of an antenna dedicated to act as receiver and provider of the AC signal, is discussed. Its operation as a substitute for sinusoidal voltage generator in the rectifier circuit is validated.Ce travail de thèse porte sur la mise en place des éléments constitutifs du premier étage d’une étiquette RFID passive. Il s’agit notamment d’une antenne intégrée et d’un dispositif de redressement. La réalisation des composants repose sur la technologie silicium très basse température (T