© 2019 WILEY-VCH Verlag GmbH & Co. KGaA, WeinheimThree central themes in the study of the phenomenon of resistive switching are the nature of the conducting phase, why it forms, and how it forms. In this study, the answers to all three questions are provided by performing switching experiments in situ in a transmission electron microscope on thin films of the model system polycrystalline SrTiO3. On the basis of high-resolution transmission electron microscopy, electron-energy-loss spectroscopy and in situ current–voltage measurements, the conducting phase is identified to be SrTi11O20. This phase is only observed at specific grain boundaries, and a Ruddlesden–Popper phase, Sr3Ti2O7, is typically observed adjacent to the conducting phase. Th...
Due to physical limitations of the currently used flash memory in terms of writing speed and scalabi...
Due to physical limitations of the currently used flash memory in terms of writing speed and scalabi...
Resistive Random Access Memory (ReRAM) technology is a promising candidate for future non-volatile, ...
Identification of microstructural evolution of nanoscale conducting phase, such as conducting filame...
The local conductivity of SrTiO3 thin films epitaxially grown on SrRuO3-buffered SrTiO3 single cryst...
We deliberately fabricated SrTiO3 thin films deviating from ideal stoichiometry and from two-dimensi...
The resistance switching phenomenon in many transition metal oxides is described by ion motion leadi...
To overcome the physical limits of todays memory technologies new concepts are needed. The resistive...
The resistance switching phenomenon in many transition metal oxides is described by ion motion leadi...
The resistance switching phenomenon in many transition metal oxides is described by ion motion leadi...
In this work, we address the following question: Where do the resistive switching processes take pla...
The quest for a non-volatile, small and fast computer memory calls for new memory concepts. Resistiv...
In this work, we address the following question Where do the resistive switching processes take pl...
In this work, we address the following question Where do the resistive switching processes take pl...
In this work, we address the following question Where do the resistive switching processes take pl...
Due to physical limitations of the currently used flash memory in terms of writing speed and scalabi...
Due to physical limitations of the currently used flash memory in terms of writing speed and scalabi...
Resistive Random Access Memory (ReRAM) technology is a promising candidate for future non-volatile, ...
Identification of microstructural evolution of nanoscale conducting phase, such as conducting filame...
The local conductivity of SrTiO3 thin films epitaxially grown on SrRuO3-buffered SrTiO3 single cryst...
We deliberately fabricated SrTiO3 thin films deviating from ideal stoichiometry and from two-dimensi...
The resistance switching phenomenon in many transition metal oxides is described by ion motion leadi...
To overcome the physical limits of todays memory technologies new concepts are needed. The resistive...
The resistance switching phenomenon in many transition metal oxides is described by ion motion leadi...
The resistance switching phenomenon in many transition metal oxides is described by ion motion leadi...
In this work, we address the following question: Where do the resistive switching processes take pla...
The quest for a non-volatile, small and fast computer memory calls for new memory concepts. Resistiv...
In this work, we address the following question Where do the resistive switching processes take pl...
In this work, we address the following question Where do the resistive switching processes take pl...
In this work, we address the following question Where do the resistive switching processes take pl...
Due to physical limitations of the currently used flash memory in terms of writing speed and scalabi...
Due to physical limitations of the currently used flash memory in terms of writing speed and scalabi...
Resistive Random Access Memory (ReRAM) technology is a promising candidate for future non-volatile, ...