Active control of defect structures and associated polarization switching in a ferroelectric material is achieved without compromising its ferroelectric properties. Based on dipolar interaction between defect dipole and polarization, the unique functionality of the defect dipole to control ferroelectric switching is visualized. This approach can provide a foundation for novel ferroelectric applications, such as high-density multilevel data storage. © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.129261sciescopu
Deterministic creation of multiple ferroelectric states with variant values of polarization in ferro...
Symposium U - Mechanical Behavior of Micro - and Nano-Scale Systems: No. A00380-00702Two-dimensional...
Data repository for the paper published in Advanced Electronic Materials. https://doi.org/10.1002/ae...
Electric-field switching of polarization is the building block of a wide variety of ferroelectric de...
Antiferroelectrics, which undergo a field-induced phase transition to ferroelectric order that manif...
Modern computing based on Von Neumann architecture and storage devices are based on detecting a chan...
Simulations of the polarization switching process near the tip of an edge crack in relaxor ferroelec...
Ferroelectric materials have established themselves as indispensable in key applications such as pie...
Results of switching behavior of the improper ferroelectric LuFeO3 are presented. Using a model set ...
Results of switching behavior of the improper ferroelectric LuFeO3 are presented. Using a model set ...
Ferroelectric materials possess a spontaneous polarization that is switchable by an electric field. ...
A homogeneous ferroelectric single crystal exhibits only two remanent polarization states that are s...
The characteristic property of ferroelectric materials, which is the reversal of polarization by an ...
Interaction between dipoles often emerges intriguing physical phenomena, such as exchange bias in th...
Phase field simulations were conducted to study the influence of dislocation walls on the domain con...
Deterministic creation of multiple ferroelectric states with variant values of polarization in ferro...
Symposium U - Mechanical Behavior of Micro - and Nano-Scale Systems: No. A00380-00702Two-dimensional...
Data repository for the paper published in Advanced Electronic Materials. https://doi.org/10.1002/ae...
Electric-field switching of polarization is the building block of a wide variety of ferroelectric de...
Antiferroelectrics, which undergo a field-induced phase transition to ferroelectric order that manif...
Modern computing based on Von Neumann architecture and storage devices are based on detecting a chan...
Simulations of the polarization switching process near the tip of an edge crack in relaxor ferroelec...
Ferroelectric materials have established themselves as indispensable in key applications such as pie...
Results of switching behavior of the improper ferroelectric LuFeO3 are presented. Using a model set ...
Results of switching behavior of the improper ferroelectric LuFeO3 are presented. Using a model set ...
Ferroelectric materials possess a spontaneous polarization that is switchable by an electric field. ...
A homogeneous ferroelectric single crystal exhibits only two remanent polarization states that are s...
The characteristic property of ferroelectric materials, which is the reversal of polarization by an ...
Interaction between dipoles often emerges intriguing physical phenomena, such as exchange bias in th...
Phase field simulations were conducted to study the influence of dislocation walls on the domain con...
Deterministic creation of multiple ferroelectric states with variant values of polarization in ferro...
Symposium U - Mechanical Behavior of Micro - and Nano-Scale Systems: No. A00380-00702Two-dimensional...
Data repository for the paper published in Advanced Electronic Materials. https://doi.org/10.1002/ae...