Single mode optical radiation distribution and reflectivity calculations in novel-hot electron light emission and lasing in semiconductor heterostructures VCSELs

In this work, we calculate the power reflectivity in vertical cavity surface emitting lasers (VCSELs) using a new method. In VCSELs, the stop band of the reflectivity spectrum should exhibit a dip at the lasing wavelength, which is a condition for lasing. This current approximation method gives a simple analytical expression to find the power reflectivity as a function of wavelength in the vicinity of lasing wavelength, $\lambda_0$. The proposed method can generally be applied to semiconductor VCSEL systems for a given lasing wavelength.In this work, we calculate the power reflectivity in vertical cavity surface emitting lasers (VCSELs) using a new method. In VCSELs, the stop band of the reflectivity spectrum should exhibit a dip at the lasing wavelength, which is a condition for lasing. This current approximation method gives a simple analytical expression to find the power reflectivity as a function of wavelength in the vicinity of lasing wavelength, $\lambda_0$. The proposed method can generally be applied to semiconductor VCSEL systems for a given lasing wavelength