The effect of nitrogen incorporation in DLC films deposited by ECR Microwave Plasma CVD

Diamond like carbon (DLC) and nitrogenated diamond like carbon (DLC:N) films have been deposited by electron cyclotron resonance microwave plasma chemical vapor deposition (ECR-MP CVD) on Si (1 1 0), steel and glass substrates, using CH 4 and N 2 as plasma source. The effect of nitrogen doping on the optical, electrical, structural and mechanical properties of films was investigated. X-ray photoelectron spectroscopy (XPS), Fourier transform infrared spectroscopy (FT-IR) and Raman spectroscopy results showed that sp 2 bonded carbon phases increased while the sp 3 bonded carbon phases decreased by nitrogen doping. Microhardness measurements showed a decrease in hardness (from 75 to 69 GPa) according to nitrogen incorporation. Average transmittance of all the films was over 90% and band gap energy (E g ) of the films decreased due to increasing nitrogen flow rate. The film morphology was studied using the atomic force microscopy (AFM). Electrical properties were characterized by Hall measurement. Undoped DLC was p-type with a conductivity of 9.81 × 10 -6 (? cm) -1 . DLC films became n-type by nitrogen doping. The best conductivity value for the nitrogen doped DLC films was found 2.77 × 10 -5 (? cm) -1 . PL spectra of DLC and DLC:N films showed three peaks at 405 nm (3.06 eV), 533 nm (2.32 eV) and 671 nm (1.84 eV). © 2014 Elsevier B.V.This work is supported by the Research Found of Cukurova University and the Scientific and Technological Research Council of Turkey