The effect of magnetic field on the impurity binding energy of shallow donor impurities in a Ga1−xInxNyAs1−y/GaAs quantum well
- Yesilgul, Unal
- Ungan, Fatih
- Sakiroglu, Serpil
- Duque Echeverri, Carlos Alberto
- Mora Ramos, Miguel Eduardo
- Kasapoglu, Esin
- Sari, Huseyin
- Sokmen, Ismail
Publication date
January 2012
DOI Publisher
Springer Science and Business Media LLC Journal
Nanoscale Research Letters Language
EnglishAbstract
ABSTRACT: Using a variational approach, we have investigated the effects of the magnetic field, the impurity position, and the nitrogen and indium concentrations on impurity binding energy in a Ga1−xInxNyAs1−y/GaAs quantum well. Our calculations have revealed the dependence of impurity binding on the applied magnetic field, the impurity position, and the nitrogen and indium concentrations
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