Semiconductor devices may be fabricated using nanowires. In an example embodiment, a conductive gate may be used to control conduction along the nanowires, in which case one of the contacts is a drain and the other a source. The nanowires may be grown in a trench or through-hole in a substrate or in particular in an epitaxial layer on substrate. In another example embodiment, the gate may be provided only at one end of the nanowires. The nanowires can be of the same material along their length; alternatively different materials can be used, especially different materials adjacent to the gate and between the gate and the base of the trench
Bottom-up nanowires are useful building blocks for functional devices because of their controllable ...
Semiconductor nanowires have aroused a lot of scientific interest and have been regarded as one of t...
Si nanowires have a multitude of potential applications including transistors, memories, photovolta...
Semiconductor devices may be fabricated using nanowires. In an example embodiment, a conductive gate...
Semiconductor devices may be fabricated using nanowires. In an example embodiment, a conductive gate...
This thesis explores the possibility of using advanced device geometries and heterostructure enginee...
In the method, semiconductor substrates are etched to provide nanowires, said substrates comprising ...
In the method, semiconductor substrates are etched to provide nanowires, said substrates comprising ...
In the method, semiconductor substrates are etched to provide nanowires, said substrates comprising ...
In the method, semiconductor substrates are etched to provide nanowires, said substrates comprising ...
In the method, semiconductor substrates are etched to provide nanowires, said substrates comprising ...
In the method, semiconductor substrates are etched to provide nanowires, said substrates comprising ...
In the method, semiconductor substrates are etched to provide nanowires, said substrates comprising ...
Abstract in Undetermined Extreme down-scaling of nanoelectronic devices by top-down fabrication meth...
Since the introduction of the transistor and the integrated circuit, the semiconductor industry has ...
Bottom-up nanowires are useful building blocks for functional devices because of their controllable ...
Semiconductor nanowires have aroused a lot of scientific interest and have been regarded as one of t...
Si nanowires have a multitude of potential applications including transistors, memories, photovolta...
Semiconductor devices may be fabricated using nanowires. In an example embodiment, a conductive gate...
Semiconductor devices may be fabricated using nanowires. In an example embodiment, a conductive gate...
This thesis explores the possibility of using advanced device geometries and heterostructure enginee...
In the method, semiconductor substrates are etched to provide nanowires, said substrates comprising ...
In the method, semiconductor substrates are etched to provide nanowires, said substrates comprising ...
In the method, semiconductor substrates are etched to provide nanowires, said substrates comprising ...
In the method, semiconductor substrates are etched to provide nanowires, said substrates comprising ...
In the method, semiconductor substrates are etched to provide nanowires, said substrates comprising ...
In the method, semiconductor substrates are etched to provide nanowires, said substrates comprising ...
In the method, semiconductor substrates are etched to provide nanowires, said substrates comprising ...
Abstract in Undetermined Extreme down-scaling of nanoelectronic devices by top-down fabrication meth...
Since the introduction of the transistor and the integrated circuit, the semiconductor industry has ...
Bottom-up nanowires are useful building blocks for functional devices because of their controllable ...
Semiconductor nanowires have aroused a lot of scientific interest and have been regarded as one of t...
Si nanowires have a multitude of potential applications including transistors, memories, photovolta...