Comparative Raman study of graphene growth from solid carbon source on Si(100) and SiO2 substrates by combining pulsed laser deposition and rapid thermal annealing

International audienceThis study reports the comparative investigation of graphene films prepared on Si (100) and SiO2 by combining pulsed laser deposition and rapid thermal annealing using Ni catalyst. The effect of substrate and growth temperatures (600-1000°C) on the formation of graphene films was investigated by Raman spectroscopy, mapping and scanning electron microscopy (SEM). It was found that graphene films formed on Si (100) is multilayered with the formation of various nickel silicides depending on the growth temperature, while graphene films prepared on SiO2 are predominant bi- and trilayered graphene with no nickel silicide formation. The analysis of the Raman D, G and 2D peaks intensities and positions as a function of the growth temperature showed a complete opposite evolution between Si (100) and SiO2 substrates. These findings contribute to a better understanding of the combination between the nature of the substrate and the growth temperature, when growing graphene films from solid carbon source with nickel catalyst on both Si(100) and SiO2 substrates. Such a good comprehension of the substrate impact is vital for potential applications and device fabrication of graphene