ELECTRONIC PROPERTIES OF ATOMICALLY THIN MATERIAL HETEROSTRUCTURES

There is a movement in the electronic industry toward building electronic devices with dimensions smaller than is currently possible. Atomically thin 2D material, such as graphene, bilayer graphene, hBN and MoS2 are great candidate for this goal and they have a potential set of novel electronic properties compare to their bulk counterparts due to the exhibition of quantum confinement effects. To this goal, we have investigated the electric field screening of multilayer 2D materials due to the presence of impurity charge in the interface and vertical electric fifield from back gate. Our result shows a dramatic difference of screening behavior in high and low charging limit, which depends on the number of layers as well. We also have an extensive study on quantum tunneling effect in graphene and bilayer graphene heterojunctions. The peculiar electronic properties of graphene lead to an unusual scattering effect of electron in graphene n-p junction. We implement the cohesive tunneling effect to explain the nonlinear electron transport in ultrashort channel graphene devices. This nonlinear behavior could make them tremendously useful for ultra-fast electronic applications