\u3cp\u3eThe distortion behaviour of MOSFETs is important for RF-applications. In this paper the influence of technology variations (oxide thickness, substrate doping,...) on distortion is investigated using measurements and a recently developed compact MOSFET model. The influence on distortion of technology scaling down to 0.18μm is verified and further scaling according to the ITRS-roadmap is predicted.\u3c/p\u3
The technology of CMOS large-scale integrated circuits (LSI’s) achieved remarkable advances over las...
The effect of scaling (1 μm to 0.09 μm) on the non-quasi-static (NQS) behaviour of the MOSFET has be...
This work presents a systematic comparative study of the influence of various process options on the...
\u3cp\u3eDistortion measurements up to 1 GHz ground tone for 3 different sub-micron CMOS technologie...
\u3cp\u3eThe impact of scaling on the analog performance of MOS devices at RF frequencies was studie...
The harmonic distortion (HD) of MOSFETs operating in the triode regime is thoroughly investigated fo...
The technology of CMOS large-scale integrated circuits (LSI's) achieved remarkable advances over las...
[[abstract]]In this paper, we demonstrate a comprehensive analysis of small-signal source-body resis...
Single halo (SH) and double halo (DH) metal oxide semiconductor field effect transistors (MOSFETs) h...
[[abstract]]In this paper, we demonstrate an analysis of the effects of transconductance g(m) on the...
Abstract - Device scaling is directly responsible for Moore’s law and has enabled remarkable improve...
[[abstract]]In this paper, we demonstrate a comprehensive analysis of small-signal source-body resis...
The core of this thesis is a thorough investigation of the scaling properties of conventional nano-C...
[[abstract]]In this paper, we demonstrate an analysis of the effects of transconductance g(m) on the...
[[abstract]]The measured RF performance of 0.5, 0.25, and 0.18 μm MOSFETs gradually saturates as sca...
The technology of CMOS large-scale integrated circuits (LSI’s) achieved remarkable advances over las...
The effect of scaling (1 μm to 0.09 μm) on the non-quasi-static (NQS) behaviour of the MOSFET has be...
This work presents a systematic comparative study of the influence of various process options on the...
\u3cp\u3eDistortion measurements up to 1 GHz ground tone for 3 different sub-micron CMOS technologie...
\u3cp\u3eThe impact of scaling on the analog performance of MOS devices at RF frequencies was studie...
The harmonic distortion (HD) of MOSFETs operating in the triode regime is thoroughly investigated fo...
The technology of CMOS large-scale integrated circuits (LSI's) achieved remarkable advances over las...
[[abstract]]In this paper, we demonstrate a comprehensive analysis of small-signal source-body resis...
Single halo (SH) and double halo (DH) metal oxide semiconductor field effect transistors (MOSFETs) h...
[[abstract]]In this paper, we demonstrate an analysis of the effects of transconductance g(m) on the...
Abstract - Device scaling is directly responsible for Moore’s law and has enabled remarkable improve...
[[abstract]]In this paper, we demonstrate a comprehensive analysis of small-signal source-body resis...
The core of this thesis is a thorough investigation of the scaling properties of conventional nano-C...
[[abstract]]In this paper, we demonstrate an analysis of the effects of transconductance g(m) on the...
[[abstract]]The measured RF performance of 0.5, 0.25, and 0.18 μm MOSFETs gradually saturates as sca...
The technology of CMOS large-scale integrated circuits (LSI’s) achieved remarkable advances over las...
The effect of scaling (1 μm to 0.09 μm) on the non-quasi-static (NQS) behaviour of the MOSFET has be...
This work presents a systematic comparative study of the influence of various process options on the...
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