Accurate thermal noise model for deep-submicron CMOS

\u3cp\u3eExtensive measurements of drain current thermal noise are presented for 3 different CMOS technologies and for gate lengths ranging from 2 μm down to 0.17 μm. Using a surface-potential-based compact MOS model with improved descriptions of carrier mobility and velocity saturation, all the experimental results can be described accurately without invoking carrier heating effects or introducing additional parameters.\u3c/p\u3