OxRAM-Based Non Volatile Flip-Flop in 28nm FDSOI
- Jovanovic, Natalija
- Thomas, Olivier
- Vianello, Elisa
- Portal, Jean-Michel
- Nikolic, Boris
- Naviner, Lirida A. B.
Publication date
June 2014
DOI Publisher
Institute of Electrical and Electronics Engineers (IEEE)Abstract
International audienceThis paper presents a robust OxRAM-based nonvolatile flip-flop (NVFF) solution, designed for deep nano-scaled CMOS technologies. Forming, set and reset operations rely on a reliable design approach using thin gate oxide CMOS. The NVFF is benchmarked against a standard FF in 28nm CMOS FDSOI. Non-volatility is added with minimal impact on the FF performances
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