We have investigated elastic and fracture properties of amorphous Al2O3 thin films deposited by atomic layer deposition (ALD) with bulge test technique using a free-standing thin film membrane and extended applicability of bulge test technique. Elastic modulus was determined to be 115 GPa for a 50 nm thick film and 170 GPa for a 15 nm thick film. Residual stress was 142 MPa in the 50 nm Al2O3 film while it was 116 MPa in the 15 nm Al2O3 film. Density was 3.11 g cm(-3) for the 50 nm film and 3.28 g cm(-3) for the 15 nm film. Fracture strength at 100 hPa s(-1) pressure ramp rate was 1.72 GPa for the 50 nm film while for the 15 nm film it was 4.21 GPa, almost 2.5-fold. Fracture strength was observed to be positively strain-rate dependent. Weib...
Use of atomic layer deposition (ALD) in microelectromechanical systems (MEMS) has increased as ALD e...
Atomic layer deposited (ALD) films have become essential for various microelectromechanical systems ...
Residual stresses in amorphous aluminium oxide films were investigated with in situ wafer curvature ...
We have investigated elastic and fracture properties of amorphous Al2O3 thin films deposited by atom...
We have investigated elastic and fracture properties of amorphous Al2O3 thin films deposited by atom...
We have investigated elastic and fracture properties of amorphous Al2O3 thin films deposited by atom...
Amorphous structure aluminum oxide (Al2O3) films are used for various applications such as gas- and ...
Amorphous structure aluminum oxide (Al2O3) films are used for various applications such as gas- and ...
Amorphous structure aluminum oxide (Al2O3) films are used for various applications such as gas- and ...
We assessed mechanical properties of free-standing atomic-layer-deposited (ALD) Al2O3 thin films, mi...
We assessed mechanical properties of free-standing atomic-layer-deposited (ALD) Al2O3 thin films, mi...
Amorphous structure aluminum oxide (Al2O3) films are used for various applications such as gas- and ...
The fracture strength of Al2O3 membranes deposited by atomic layer deposition at 110, 150, 200, and ...
The fracture strength of Al2O3 membranes deposited by atomic layer deposition at 110, 150, 200, and ...
Use of atomic layer deposition (ALD) in microelectromechanical systems (MEMS) has increased as ALD e...
Use of atomic layer deposition (ALD) in microelectromechanical systems (MEMS) has increased as ALD e...
Atomic layer deposited (ALD) films have become essential for various microelectromechanical systems ...
Residual stresses in amorphous aluminium oxide films were investigated with in situ wafer curvature ...
We have investigated elastic and fracture properties of amorphous Al2O3 thin films deposited by atom...
We have investigated elastic and fracture properties of amorphous Al2O3 thin films deposited by atom...
We have investigated elastic and fracture properties of amorphous Al2O3 thin films deposited by atom...
Amorphous structure aluminum oxide (Al2O3) films are used for various applications such as gas- and ...
Amorphous structure aluminum oxide (Al2O3) films are used for various applications such as gas- and ...
Amorphous structure aluminum oxide (Al2O3) films are used for various applications such as gas- and ...
We assessed mechanical properties of free-standing atomic-layer-deposited (ALD) Al2O3 thin films, mi...
We assessed mechanical properties of free-standing atomic-layer-deposited (ALD) Al2O3 thin films, mi...
Amorphous structure aluminum oxide (Al2O3) films are used for various applications such as gas- and ...
The fracture strength of Al2O3 membranes deposited by atomic layer deposition at 110, 150, 200, and ...
The fracture strength of Al2O3 membranes deposited by atomic layer deposition at 110, 150, 200, and ...
Use of atomic layer deposition (ALD) in microelectromechanical systems (MEMS) has increased as ALD e...
Use of atomic layer deposition (ALD) in microelectromechanical systems (MEMS) has increased as ALD e...
Atomic layer deposited (ALD) films have become essential for various microelectromechanical systems ...
Residual stresses in amorphous aluminium oxide films were investigated with in situ wafer curvature ...