Mask synthesis techniques for directed self-assembly

Semiconductor patterning technologies based on the current generation of 193 nm immersion lithography can no longer sustain advanced process nodes beyond 10 nm. Hence, the adoption of next generation patterning techniques such as Extreme Ultra Violet Lithography (EUVL) and Directed Self Assembly (DSA) has become a necessity. Though there have been great strides in materials development for DSA with high χ materials enabling up to 5 nm pitches, DSA still lacks the Electronic Design Automation (EDA) tool support to enable adoption in layout design and high volume manufacturing. This Ph.D. dissertation attempts to alleviate this gap by introducing a framework that encompasses the problems of DSA-aware layout decomposition, grouping and compliance, Guiding Pattern (GP) synthesis, Resolution Enhancement Techniques (RET) and final verification. The above framework also enumerates the variations of each of the above steps for DSA candidate layers such as contacts, fins and metal lines. The first component of this framework is a model based GP synthesis algorithm for generating GP's with arbitrary contact topologies capable of accurate contact placement and also resilient to contact phase transition during assembly. The contacts assembled using these GP's also show resilience towards post RET process variations. A Monte-Carlo simulation based study is then presented which analyzes the prospect of applying DSA to the printing of the Fin layer in FinFets as compared to Self-Aligned Double Patterning (SADP) which is the existing technology for printing Fins. The next component of this framework introduces layout decomposition algorithms for DSA GP and optical trim mask co-optimization for printing fins. The final component of this framework presents a family of practical full-chip hybrid multi-patterning (MP)/DSA decomposition algorithms for contacts using DSA as a relaxation method for reducing coloring conflicts.Electrical and Computer Engineerin