Displacement Damage Effects in GeSn Light Emitting Diodes

Potential future use on Earth-orbiting satellites calls for investigation into the suitability of GeSn based photonic devices in high energy proton environments. The electroluminescence (EL) intensity of Ge1-xSnx (x = 0, 0.02, 0.069, and 0.094) light emitting diodes was measured before and after irradiation by 2 MeV protons at relatively high fluence levels. The results showed that GeSn devices with higher Sn content were up to 10 times more resistant against proton displacement damage than the pure Ge (x = 0) devices. As Sn concentration increased, the band gap decreased, and V-P hole trap energy level moved further from the mid-gap level, resulting in less EL degradation via Shockley Read Hall (SRH) process