Time resolved spectroscopy of photoinduced absorption in glow-discharge a-Si:H

Journal ArticleThe time and temperature dependence of the photoinduced absorption spectra was measured in glow-discharge a-Si:H in the energy range 0.7 to 1.4 eV, temperature interval 10 to 306K and time domain 2 ys to 2 ms. The results are consistent with a model based on thermalization of excess carriers in trap states