Journal ArticleThe ultrafast photocarrier dynamics in polysilane alloys amorphous (SiH2)n' has been studied using the picosecond photoinduced absorption (PA) technique. For excitation below the optical gap, the PA response decays exponentially and is faster at low temperatures. This is interpreted in terms of e-h geminate recombination in the small clusters (~ 10 A) of αSi:H embedded in the polysilane matrix. The PA response with above-gap excitation t-ß (ß<1), independent of spectral range between 1.4 and 2.2 eV. This shows that the e-h distance after above-gap photogeneration is larger than the size of the αSi:H clusters
Journal ArticleA study of charge-carrier recombination in intrinsic hydrogenated amorphous silicon (...
Journal ArticleWe report on measurements of ultrafast relaxation processes in transmission and refle...
Journal ArticleTransient photomodulation spectra were measured on nanocrystalline Si:H films in the ...
Journal ArticleTrapping of photoexcited carriers in the picosecond and subnanosecond time domains wa...
Journal ArticleUsing time resolved photoinduced absorption with subpicosecond resolution we studied ...
Journal ArticleThe photocarrier dynamics in compensated a-Si:H is studied using the time-dependent p...
Journal ArticleWe have extended our photomodulation studies of nc-Si:H to the picosecond time domain...
Journal ArticleThermalization of photogenerated hot carriers in a-Si, a-Si:H and a-Si:H:F was studie...
Journal ArticlePicosecond trapping of photogenerated carriers in gap states of doped, compensated an...
Thesis (Ph.D.), Department of Physics and Astronomy, Washington State UniversityThis dissertation pr...
Journal ArticleWe report time-of-flight experiments in the time range from 0.2 psec to 1.8 nsec in 0...
Journal ArticleThe decay of photoinduced sub-bandgap absorption (PA) following pulsed excitation was...
Journal ArticleThe transient response of mid-gap absorption in a-Si:H to pulsed optical excitation i...
Journal ArticleThe steady state subgap photoinduced absorpotion bands in a-Ge:H and a-Si:H are inter...
Journal ArticleThermalization of photoinduced carriers in a-Si and α-Si:H was studied with use of su...
Journal ArticleA study of charge-carrier recombination in intrinsic hydrogenated amorphous silicon (...
Journal ArticleWe report on measurements of ultrafast relaxation processes in transmission and refle...
Journal ArticleTransient photomodulation spectra were measured on nanocrystalline Si:H films in the ...
Journal ArticleTrapping of photoexcited carriers in the picosecond and subnanosecond time domains wa...
Journal ArticleUsing time resolved photoinduced absorption with subpicosecond resolution we studied ...
Journal ArticleThe photocarrier dynamics in compensated a-Si:H is studied using the time-dependent p...
Journal ArticleWe have extended our photomodulation studies of nc-Si:H to the picosecond time domain...
Journal ArticleThermalization of photogenerated hot carriers in a-Si, a-Si:H and a-Si:H:F was studie...
Journal ArticlePicosecond trapping of photogenerated carriers in gap states of doped, compensated an...
Thesis (Ph.D.), Department of Physics and Astronomy, Washington State UniversityThis dissertation pr...
Journal ArticleWe report time-of-flight experiments in the time range from 0.2 psec to 1.8 nsec in 0...
Journal ArticleThe decay of photoinduced sub-bandgap absorption (PA) following pulsed excitation was...
Journal ArticleThe transient response of mid-gap absorption in a-Si:H to pulsed optical excitation i...
Journal ArticleThe steady state subgap photoinduced absorpotion bands in a-Ge:H and a-Si:H are inter...
Journal ArticleThermalization of photoinduced carriers in a-Si and α-Si:H was studied with use of su...
Journal ArticleA study of charge-carrier recombination in intrinsic hydrogenated amorphous silicon (...
Journal ArticleWe report on measurements of ultrafast relaxation processes in transmission and refle...
Journal ArticleTransient photomodulation spectra were measured on nanocrystalline Si:H films in the ...