Add to ORKGJournal ArticleWhen a semiconductor host is doped by a foreign element, it is inevitable that a volume change will occur in the doped system. This volume change depends on both the size and charge state difference between the dopant and the host element. Unlike the ‘‘common expectation'' that if the host is deformed to the same size as the dopant, then the formation energy of the dopant would reach a minimum, our first principles calculations discovered that when an external hydrostatic strain is applied, the change of the impurity formation energy is monotonic: it decreases if the external hydrostatic strain is applied in the same direction as the volume change. This effect also exists when a biaxial strain is applied. A simple strain mod...
In this work, the code “Poisson” written by Silsbee and Drager, developed at Cornell University was ...
Using defect thermodynamics, we discuss physical factors that affect doping limits in semiconductors...
Although cation-vacancies can induce localized magnetic moments in semiconductors, the collective ma...
CMOS scaling is rapidly reaching physical limits, forcing the industry to consider alternative route...
dissertationSurfactant effects are usually achieved by the addition of a single surface element. We ...
Although carrier mobility (μ) in Si is a fundamental property deeply investigated since 40 years, a ...
The effects of stress on equilibrium point defect populations and on dopant diffusion in strained se...
The creation of highly conductive ultrashallow-doped regions in strained Si is a key requirement for...
We present a review of both theoretical and experimental studies of stress effects on the solubility...
The suitability of silicon for micro and sub-micro electronic devices is being challenged by the agg...
The paper shows an influence of doping on lattice constant of a semiconductor. Three effects are dis...
Mechanical effects play a role in the electronic behavior of semiconductors in various applications....
State-of-the-art transistors achieve their improved performance through strain engineering. The some...
We consider the formation energies and stabilities of dopants in semiconductor alloys. We show that ...
The effects of external and internal strains and of defect charges on the formation of vacancies, an...
In this work, the code “Poisson” written by Silsbee and Drager, developed at Cornell University was ...
Using defect thermodynamics, we discuss physical factors that affect doping limits in semiconductors...
Although cation-vacancies can induce localized magnetic moments in semiconductors, the collective ma...
CMOS scaling is rapidly reaching physical limits, forcing the industry to consider alternative route...
dissertationSurfactant effects are usually achieved by the addition of a single surface element. We ...
Although carrier mobility (μ) in Si is a fundamental property deeply investigated since 40 years, a ...
The effects of stress on equilibrium point defect populations and on dopant diffusion in strained se...
The creation of highly conductive ultrashallow-doped regions in strained Si is a key requirement for...
We present a review of both theoretical and experimental studies of stress effects on the solubility...
The suitability of silicon for micro and sub-micro electronic devices is being challenged by the agg...
The paper shows an influence of doping on lattice constant of a semiconductor. Three effects are dis...
Mechanical effects play a role in the electronic behavior of semiconductors in various applications....
State-of-the-art transistors achieve their improved performance through strain engineering. The some...
We consider the formation energies and stabilities of dopants in semiconductor alloys. We show that ...
The effects of external and internal strains and of defect charges on the formation of vacancies, an...
In this work, the code “Poisson” written by Silsbee and Drager, developed at Cornell University was ...
Using defect thermodynamics, we discuss physical factors that affect doping limits in semiconductors...
Although cation-vacancies can induce localized magnetic moments in semiconductors, the collective ma...