Journal ArticleSub-10 nm resolution can be obtained in scanning capacitance microscopy (SCM) if the probe tip is approximately of the same size. Such resolution is observed, although infrequently, with present commercially available probes. To acquire routine sub-10 nm resolution, a solid Pt metal probe has been developed with a sub-10 nm tip radius. The probe is demonstrated by SCM imaging on a cross-sectioned 70 nm gatelength field-effect transistor (FET), a shallow implant (n+/p, 24 nm junction depth), and an epitaxial staircase (p, ;75 nm steps)
Within the last three decades Scanning Probe Microscopy has been developed to a powerful tool for me...
International audienceScanning capacitance microscopy (SCM) is a doping profile extraction using a n...
This work was devoted to the experimental study of the scanning capacitance microscopy (SCM) and spe...
Journal ArticleMeasurement of dopant density in silicon with lateral resolution on the 200 nm scale ...
Journal ArticleScanning capacitance microscopy and atomic force microscopy have been used to image ...
Journal ArticleA near-field capacitance microscope has been demonstrated on a 25 nm scale. A resonan...
A fine needle stylus mounted to a three-dimensional piezo system is scanned across the sample in x-a...
Journal ArticleScanning probe technology, with its inherent two-dimensionality, offers unique capabi...
Journal ArticleSeveral advances have been made toward the achievement of quantitative two-dimensiona...
Journal ArticleThe scanning capacitance microscope (SCM) has been shown to be useful for quantitativ...
Journal ArticleThe depth dependent carrier density was measured on an arsenic implanted silicon samp...
The integration of low-temperature scanning-probe techniques and single-electron capacitance spectro...
Several Scanning Probe Microscopy (SPM) methods allow to image dopant profiles in a range from 10(14...
Journal ArticleQuantitative dopant profile measurements are performed on a nanometer scale by scanni...
Scanning capacitance microscopy and electrostatic force microscopy have been used to characterize co...
Within the last three decades Scanning Probe Microscopy has been developed to a powerful tool for me...
International audienceScanning capacitance microscopy (SCM) is a doping profile extraction using a n...
This work was devoted to the experimental study of the scanning capacitance microscopy (SCM) and spe...
Journal ArticleMeasurement of dopant density in silicon with lateral resolution on the 200 nm scale ...
Journal ArticleScanning capacitance microscopy and atomic force microscopy have been used to image ...
Journal ArticleA near-field capacitance microscope has been demonstrated on a 25 nm scale. A resonan...
A fine needle stylus mounted to a three-dimensional piezo system is scanned across the sample in x-a...
Journal ArticleScanning probe technology, with its inherent two-dimensionality, offers unique capabi...
Journal ArticleSeveral advances have been made toward the achievement of quantitative two-dimensiona...
Journal ArticleThe scanning capacitance microscope (SCM) has been shown to be useful for quantitativ...
Journal ArticleThe depth dependent carrier density was measured on an arsenic implanted silicon samp...
The integration of low-temperature scanning-probe techniques and single-electron capacitance spectro...
Several Scanning Probe Microscopy (SPM) methods allow to image dopant profiles in a range from 10(14...
Journal ArticleQuantitative dopant profile measurements are performed on a nanometer scale by scanni...
Scanning capacitance microscopy and electrostatic force microscopy have been used to characterize co...
Within the last three decades Scanning Probe Microscopy has been developed to a powerful tool for me...
International audienceScanning capacitance microscopy (SCM) is a doping profile extraction using a n...
This work was devoted to the experimental study of the scanning capacitance microscopy (SCM) and spe...