Add to ORKGJournal ArticleHigh-resolution scanning tunneling microscopy studies of the Si(100)-(2 X 1) surface show a heretofore unrecognized distortion of the substrate structure when islands form during the initial stage of growth of either Si or Ge. The distortion, reflecting the influence of strain, extends at least three dimers away from the adsorption sites. We present a realistic structural model
We combine theory and experiments to study bias-dependent scanning tunneling microscopy (STM) images...
cited By 4International audienceDetailed low temperature scanning tunneling microscope images of the...
Grazing incidence X-ray diffraction has been employed to determine directly the distribution of stra...
Ge deposited on Si(100) initially forms heteroepitaxial layers, which grow to a critical thickness o...
Ge deposited on Si(100) initially forms heteroepitaxial layers, which grow to a critical thickness o...
A new class of structure models for the (113) and (115) orientations of Si and Ge is proposed. They ...
Large area dimer vacancy arrays can be formed on the Si(100) surface when Si atoms are deposited on ...
The growth of two dimensional (2D) Ge islands on differently structured Si(111) surfaces is studied ...
The results of STM and RHEED studies of a thin Ge film grown on the Si/Si(001) epitaxial layers with...
The early stages of silicon heteroepitaxial growth on Ge(100) have been studied with scanning tunnel...
The early stages of silicon heteroepitaxial growth on Ge(100) have been studied with scanning tunnel...
Rearrangement of two-dimensional Ge and Si islands after coarsening on a laterally strain modulated ...
The kinetics of adsorbed Si monomers and dimers, at submonolayer coverage, are measured using scanni...
Journal ArticleWe carry out a comparative study of the energetics and dynamics of Si-Si, Ge-Ge, and ...
Grazing incidence X-ray diffraction has been employed to determine directly the distribution of stra...
We combine theory and experiments to study bias-dependent scanning tunneling microscopy (STM) images...
cited By 4International audienceDetailed low temperature scanning tunneling microscope images of the...
Grazing incidence X-ray diffraction has been employed to determine directly the distribution of stra...
Ge deposited on Si(100) initially forms heteroepitaxial layers, which grow to a critical thickness o...
Ge deposited on Si(100) initially forms heteroepitaxial layers, which grow to a critical thickness o...
A new class of structure models for the (113) and (115) orientations of Si and Ge is proposed. They ...
Large area dimer vacancy arrays can be formed on the Si(100) surface when Si atoms are deposited on ...
The growth of two dimensional (2D) Ge islands on differently structured Si(111) surfaces is studied ...
The results of STM and RHEED studies of a thin Ge film grown on the Si/Si(001) epitaxial layers with...
The early stages of silicon heteroepitaxial growth on Ge(100) have been studied with scanning tunnel...
The early stages of silicon heteroepitaxial growth on Ge(100) have been studied with scanning tunnel...
Rearrangement of two-dimensional Ge and Si islands after coarsening on a laterally strain modulated ...
The kinetics of adsorbed Si monomers and dimers, at submonolayer coverage, are measured using scanni...
Journal ArticleWe carry out a comparative study of the energetics and dynamics of Si-Si, Ge-Ge, and ...
Grazing incidence X-ray diffraction has been employed to determine directly the distribution of stra...
We combine theory and experiments to study bias-dependent scanning tunneling microscopy (STM) images...
cited By 4International audienceDetailed low temperature scanning tunneling microscope images of the...
Grazing incidence X-ray diffraction has been employed to determine directly the distribution of stra...