Journal ArticleFrom observations of self-assembly of Ge quantum dots directed by substrate morphology, we propose the concept of control of ordering in heteroepitaxy by a local strain-mediated surface chemical potential. Using quite simple lithography, we demonstrate directed quantum dot ordering. The strain part of the chemical potential is caused by the spatially nonuniform relaxation of the strained layer, which in our study is the Ge wetting layer, but, more generally, can be a deposited strained buffer layer. This model provides a consistent picture of prior literature
Extensive experimental data and an accompanying theoretical model are presented for the self-limitin...
We investigate the development of cross-hatch grid surface morphology in growing mismatched layers a...
Strain engineering during the capping of III-V quantum dots has been explored as a means to control ...
We model the effect of substrate strain patterning on the self-assembly of quantum dots (QDs). When ...
Journal ArticleComputer simulations show that if stress is present, steps on a vicinal surface can s...
It is a well known fact that strain-driven self-assembly via Stranski-Krastonov growth is a promisin...
The self-assembly of epitaxial quantum dots on (001) surfaces, driven by compressive strain, is a wi...
The strain-induced self-assembly of suitable semiconductor pairs is an attractive natural route to ...
Abstract. We have performed kinetic Monte Carlo simulations which explain the self-organized Stransk...
The strain-induced self-assembly of suitable semiconductor pairs is an attractive natural route to ...
Journal ArticleWe demonstrate, by both theory and experiment, the strain-induced self-organized form...
The formation of ordered InAs/InP quantum dot (QD) arrays is demonstrated on patterned InP (1 0 0) a...
We develop a properly parameterized, three-dimensional continuum-scale kinetic model for monitoring ...
Lateral ordering of semiconductor quantum dots (QDs) of high quality in well-defined arrangements is...
Self-assembled quantum dots can be the building blocks of a variety of mesoscopic devices. However, ...
Extensive experimental data and an accompanying theoretical model are presented for the self-limitin...
We investigate the development of cross-hatch grid surface morphology in growing mismatched layers a...
Strain engineering during the capping of III-V quantum dots has been explored as a means to control ...
We model the effect of substrate strain patterning on the self-assembly of quantum dots (QDs). When ...
Journal ArticleComputer simulations show that if stress is present, steps on a vicinal surface can s...
It is a well known fact that strain-driven self-assembly via Stranski-Krastonov growth is a promisin...
The self-assembly of epitaxial quantum dots on (001) surfaces, driven by compressive strain, is a wi...
The strain-induced self-assembly of suitable semiconductor pairs is an attractive natural route to ...
Abstract. We have performed kinetic Monte Carlo simulations which explain the self-organized Stransk...
The strain-induced self-assembly of suitable semiconductor pairs is an attractive natural route to ...
Journal ArticleWe demonstrate, by both theory and experiment, the strain-induced self-organized form...
The formation of ordered InAs/InP quantum dot (QD) arrays is demonstrated on patterned InP (1 0 0) a...
We develop a properly parameterized, three-dimensional continuum-scale kinetic model for monitoring ...
Lateral ordering of semiconductor quantum dots (QDs) of high quality in well-defined arrangements is...
Self-assembled quantum dots can be the building blocks of a variety of mesoscopic devices. However, ...
Extensive experimental data and an accompanying theoretical model are presented for the self-limitin...
We investigate the development of cross-hatch grid surface morphology in growing mismatched layers a...
Strain engineering during the capping of III-V quantum dots has been explored as a means to control ...