Journal ArticleA study of charge-carrier recombination in intrinsic hydrogenated amorphous silicon (a-Si:H) is presented using pulsed electrically and pulsed optically detected magnetic-resonance spectroscopies in order to measure the influence of spin-dependent recombination on photoluminescence (PL) and photoconductivity (PC). The experiments show band tail state recombination influencing the PL but not the PC which constitutes geminate recombination of correlated charge carriers that do not contribute to charge transport. In contrast, nongeminate recombination through silicon dangling bonds is observed influencing both PL and PC. The experiments presented constitute a direct and unambiguous observation of geminate and nongeminate reco...
29Si hyperfine (hf) structures of light-induced electron-spin-resonance (LESR) centers of g=2.004 an...
Journal ArticleA quantitative study of the trap-dangling bond tunneling recombination in hydrogenate...
Bulk recombination of photogenerated carriers is studied by transient photocurrent measurements in p...
Abstract.- One of the characteristic features of amorphous semiconductors is the low carrier mobilit...
Journal ArticleThe ultrafast photocarrier dynamics in polysilane alloys amorphous (SiH2)n' has been ...
The spectroscopic pump-probe reflectance method was used to investigate recombination dynamics in sa...
Journal ArticleAn experiment is presented which allows the observation of charge-carrier pair format...
Recent low temperature a-Si:H photoluminescence experiments show the presence of two peaks in the li...
A range of the distinctive physical properties, comprising high surface-to-volume ratio, possibility...
Journal ArticleThe steady state subgap photoinduced absorpotion bands in a-Ge:H and a-Si:H are inter...
Journal ArticleThe photocarrier dynamics in compensated a-Si:H is studied using the time-dependent p...
Journal ArticleWe have studied photoexcitation dynamics in undoped a-Si:H from 80 K to 300 K by the ...
Journal ArticleTransient photomodulation spectra were measured on nanocrystalline Si:H films in the ...
Intermediate-band materials have the potential to be highly efficient solar cells and can be fabrica...
In this manuscript,it was investigated that the mechanism of recombinational processes in the film o...
29Si hyperfine (hf) structures of light-induced electron-spin-resonance (LESR) centers of g=2.004 an...
Journal ArticleA quantitative study of the trap-dangling bond tunneling recombination in hydrogenate...
Bulk recombination of photogenerated carriers is studied by transient photocurrent measurements in p...
Abstract.- One of the characteristic features of amorphous semiconductors is the low carrier mobilit...
Journal ArticleThe ultrafast photocarrier dynamics in polysilane alloys amorphous (SiH2)n' has been ...
The spectroscopic pump-probe reflectance method was used to investigate recombination dynamics in sa...
Journal ArticleAn experiment is presented which allows the observation of charge-carrier pair format...
Recent low temperature a-Si:H photoluminescence experiments show the presence of two peaks in the li...
A range of the distinctive physical properties, comprising high surface-to-volume ratio, possibility...
Journal ArticleThe steady state subgap photoinduced absorpotion bands in a-Ge:H and a-Si:H are inter...
Journal ArticleThe photocarrier dynamics in compensated a-Si:H is studied using the time-dependent p...
Journal ArticleWe have studied photoexcitation dynamics in undoped a-Si:H from 80 K to 300 K by the ...
Journal ArticleTransient photomodulation spectra were measured on nanocrystalline Si:H films in the ...
Intermediate-band materials have the potential to be highly efficient solar cells and can be fabrica...
In this manuscript,it was investigated that the mechanism of recombinational processes in the film o...
29Si hyperfine (hf) structures of light-induced electron-spin-resonance (LESR) centers of g=2.004 an...
Journal ArticleA quantitative study of the trap-dangling bond tunneling recombination in hydrogenate...
Bulk recombination of photogenerated carriers is studied by transient photocurrent measurements in p...