Add to ORKGV.A.S. thanks for support of the heterostructures characterization and K.Yu.S. thanks for support of the experimental data analysis the Ministry of Science and Higher Education of the Russian Federation (Grants 16.2593.2017/4.6 and 3.9796.2017/8.9, correspondingly), V.V.F. and A.M.M. thanks for support of the growth processes the Russian Federation President Council for grants (MK-1204.2019.2 and SP-2324.2018.1, correspondingly)
A new concept of vertical gallium nitride (GaN) Schottky barrier diode based on nanowire (NW) struct...
The thesis discusses about the structural and electrical properties of GaN based materials. The lite...
In the twenty first century, the rapid development of science, engineering and technology is blessed...
One of the main goals of this thesis was to get more insight into the mechanisms driving the growth ...
In this study, we develop a systematic route toward gallium nitride (GaN) nanowire (NW) synthesis an...
We report an investigation of wurtzite GaN/AlN heterostructures grown on Si(111) substrates by MBE, ...
Gallium nitride (GaN) nanowires have potential as nanoscale optoelectronic building blocks that can ...
Gallium nitride (GaN) nanostructures are used in optoelectronic applications due to their unique opt...
The monolithic integration of wurtzite GaN on Si via metal amp; 8722;organic vapor phase epitaxy is ...
In recent years, research on Gallium nitride material is popular among the semiconductor researchers...
GaN nanorods were grown by plasma assisted molecular beam epitaxy on intrinsic Si (111) substrates w...
GaN nanocolumns are reproducibly grown by plasma-assisted molecular beam epitaxy on Si(111). The nan...
Abstract In this work, we demonstrated the direct growth of GaN nanowires on indium tin oxide (ITO)-...
This paper reports on the direct qualitative and quantitative performance comparisons of the field-e...
Selective area growth (SAG) of GaN nanowires and nanowalls on Si(111) substrates with AlN and GaN bu...
A new concept of vertical gallium nitride (GaN) Schottky barrier diode based on nanowire (NW) struct...
The thesis discusses about the structural and electrical properties of GaN based materials. The lite...
In the twenty first century, the rapid development of science, engineering and technology is blessed...
One of the main goals of this thesis was to get more insight into the mechanisms driving the growth ...
In this study, we develop a systematic route toward gallium nitride (GaN) nanowire (NW) synthesis an...
We report an investigation of wurtzite GaN/AlN heterostructures grown on Si(111) substrates by MBE, ...
Gallium nitride (GaN) nanowires have potential as nanoscale optoelectronic building blocks that can ...
Gallium nitride (GaN) nanostructures are used in optoelectronic applications due to their unique opt...
The monolithic integration of wurtzite GaN on Si via metal amp; 8722;organic vapor phase epitaxy is ...
In recent years, research on Gallium nitride material is popular among the semiconductor researchers...
GaN nanorods were grown by plasma assisted molecular beam epitaxy on intrinsic Si (111) substrates w...
GaN nanocolumns are reproducibly grown by plasma-assisted molecular beam epitaxy on Si(111). The nan...
Abstract In this work, we demonstrated the direct growth of GaN nanowires on indium tin oxide (ITO)-...
This paper reports on the direct qualitative and quantitative performance comparisons of the field-e...
Selective area growth (SAG) of GaN nanowires and nanowalls on Si(111) substrates with AlN and GaN bu...
A new concept of vertical gallium nitride (GaN) Schottky barrier diode based on nanowire (NW) struct...
The thesis discusses about the structural and electrical properties of GaN based materials. The lite...
In the twenty first century, the rapid development of science, engineering and technology is blessed...