Epitaxial Fe$_4$N thin films grown on LaAlO$_3$ (LAO) substrate using sputtering and molecular beam epitaxy techniques have been studied in this work. Within the sputtering process, films were grown with conventional direct current magnetron sputtering (dcMS) and using a high power impulse magnetron sputtering (HiPIMS) process. Surface morphology and depth profile studies on these samples reveal that HiPIMS deposited film has the lowest roughness, the highest packing density, and the sharpest interface. We found that the substrate-film interface and the microstructure play a vital role in affecting the electronic hybridization and magnetic properties of Fe$_4$N films. La from the LAO substrate and Fe from the film interdiffuse and form an u...
10-nm-thick γ′-Fe4N films were grown epitaxially on LaAlO_3(001) and MgO(001) substrates by molecula...
By analyzing the in-plane angular dependence of ferromagnetic resonance linewidth, we show that the ...
Fe/Ge multilayers were grown on single crystal Ge(0 0 1) substrates by molecular beam epitaxy. The s...
The effect of film-substrate interface on the magnetic anisotropy (MA) of epitaxial Fe4N thin films ...
The work in this licentiate is devoted to investigating the epitaxial growth of thin Fe layers on Mg...
In bulk composite materials, interfaces between adjacent materials can be neglected when evaluating ...
[Fe/Fe4N]N multilayers with high saturation magnetization were prepared on MgO(200) substrate, by th...
We investigate the growth of thin Fe layers on MgAl2O4 (001) and MgO (001) substrates using dc magne...
Thin films of Fe have been epitaxially sputtered on GaAs substrates with native oxide removal prior ...
DoctorWe have investigated magnetic and electronic properties of various Fe-based magnetic thin film...
Epitaxial Fe3O4 thin films were grown on TiN buffered Si (001) , Si( 110) , and Si( 111) substrates...
International audienceFe layers, 3, 6, 10, and 25 nm thick, were epitaxially deposited by ion-beam s...
We have grown phase-pure, buffer-free, and epitaxial α -Fe and γ′-Fe4Nγ′-Fe4N thin films by RF magn...
The magnetization of a thin Fe film epitaxially grown on GaAs(0 0 1)-4×6 was studied at different de...
Epitaxial Fe3O4(0 0 1) thin films (with a thickness in the range of 10–20 nm) grown on MgO substrate...
10-nm-thick γ′-Fe4N films were grown epitaxially on LaAlO_3(001) and MgO(001) substrates by molecula...
By analyzing the in-plane angular dependence of ferromagnetic resonance linewidth, we show that the ...
Fe/Ge multilayers were grown on single crystal Ge(0 0 1) substrates by molecular beam epitaxy. The s...
The effect of film-substrate interface on the magnetic anisotropy (MA) of epitaxial Fe4N thin films ...
The work in this licentiate is devoted to investigating the epitaxial growth of thin Fe layers on Mg...
In bulk composite materials, interfaces between adjacent materials can be neglected when evaluating ...
[Fe/Fe4N]N multilayers with high saturation magnetization were prepared on MgO(200) substrate, by th...
We investigate the growth of thin Fe layers on MgAl2O4 (001) and MgO (001) substrates using dc magne...
Thin films of Fe have been epitaxially sputtered on GaAs substrates with native oxide removal prior ...
DoctorWe have investigated magnetic and electronic properties of various Fe-based magnetic thin film...
Epitaxial Fe3O4 thin films were grown on TiN buffered Si (001) , Si( 110) , and Si( 111) substrates...
International audienceFe layers, 3, 6, 10, and 25 nm thick, were epitaxially deposited by ion-beam s...
We have grown phase-pure, buffer-free, and epitaxial α -Fe and γ′-Fe4Nγ′-Fe4N thin films by RF magn...
The magnetization of a thin Fe film epitaxially grown on GaAs(0 0 1)-4×6 was studied at different de...
Epitaxial Fe3O4(0 0 1) thin films (with a thickness in the range of 10–20 nm) grown on MgO substrate...
10-nm-thick γ′-Fe4N films were grown epitaxially on LaAlO_3(001) and MgO(001) substrates by molecula...
By analyzing the in-plane angular dependence of ferromagnetic resonance linewidth, we show that the ...
Fe/Ge multilayers were grown on single crystal Ge(0 0 1) substrates by molecular beam epitaxy. The s...