[EN] Photoluminescence and time resolved photoluminescence from single metamorphic InAs/GaAs quantum dots (QDs) emitting at 1.3 micrometers have been measured by means of a novel fibre-based characterization set-up. We demonstrate that the use of a wavelength tunable fibre Bragg grating filter increases the light collection efficiency by more than one order of magnitude as compared to a conventional grating monochromator. We identified single charged exciton and neutral biexciton transitions in the framework of a random population model. The QD recombination dynamics under pulsed excitation can be understood under the weak quantum confinement potential limit and the interaction between carriers at the wetting layer and QD states.G ...
Self-assembled, epitaxially grown InAs/GaAs quantum dots (QDs) are promising semiconductor quantum e...
Understanding the carrier dynamics of nanostructures is the key for development and optimization of ...
This research was supported by the Polish Ministry of Science and Higher Education/the National Scie...
We present time integrated and time-resolved photoluminescence (PL) measurements on a single InAs/Ga...
We have optimized the molecular-beam epitaxy growth conditions of self-organized InAsGaAs quantum do...
Semiconductor-based emitters of pairwise photonic entanglement are a promising constituent of photon...
The authors demonstrate coupling at 1.3 micro m between single InAs quantum dots (QDs) and a mode of...
Independent tuning of emission energy and decay time of neutral excitons confined in single self-ass...
Communication oraleInternational audienceSemiconductor quantum dots (QDs) are commonly considered as...
[EN] New optical fiber based spectroscopic tools open the possibility to develop more robust and eff...
textAdvances in nanofabrication have bolstered the development of new optical devices with potential...
Semiconductor quantum dots are objects with dimensions of a few to a few tens of nanometers. Confine...
We present the time-resolved optical characterization of InAs/InGaAs self-assembled quantum dots emi...
This article may be downloaded for personal use only. Any other use requires prior permission of the...
Self-assembled, epitaxially grown InAs/GaAs quantum dots (QDs) are promising semiconductor quantum e...
Understanding the carrier dynamics of nanostructures is the key for development and optimization of ...
This research was supported by the Polish Ministry of Science and Higher Education/the National Scie...
We present time integrated and time-resolved photoluminescence (PL) measurements on a single InAs/Ga...
We have optimized the molecular-beam epitaxy growth conditions of self-organized InAsGaAs quantum do...
Semiconductor-based emitters of pairwise photonic entanglement are a promising constituent of photon...
The authors demonstrate coupling at 1.3 micro m between single InAs quantum dots (QDs) and a mode of...
Independent tuning of emission energy and decay time of neutral excitons confined in single self-ass...
Communication oraleInternational audienceSemiconductor quantum dots (QDs) are commonly considered as...
[EN] New optical fiber based spectroscopic tools open the possibility to develop more robust and eff...
textAdvances in nanofabrication have bolstered the development of new optical devices with potential...
Semiconductor quantum dots are objects with dimensions of a few to a few tens of nanometers. Confine...
We present the time-resolved optical characterization of InAs/InGaAs self-assembled quantum dots emi...
This article may be downloaded for personal use only. Any other use requires prior permission of the...
Self-assembled, epitaxially grown InAs/GaAs quantum dots (QDs) are promising semiconductor quantum e...
Understanding the carrier dynamics of nanostructures is the key for development and optimization of ...
This research was supported by the Polish Ministry of Science and Higher Education/the National Scie...