Semiconductor Traps for Laser-Cooled Atomic Ions and Scalable Quantum

The electromagnetic confinement of atomic ions has provided a useful testbed for many different applications in atomic physics, including laser cooling {1}, mass spectrometry {2}, and precision control of nearly-pure quantum states {3}. Recently, ion traps have been effectively applied to the growing field of quantum computation {4}, where the ability to isolate a single ion from its environment has made it an attractive architecture for a large-scale quantum information processor {5, 6, 7}. While many of the fundamental quantum computing building blocks have been demonstrated with trapped ions {8}, the technology for scaling to large numbers of ion quantum bits (qubits) is just beginning to develop. In this paper, we describe an important milestone on this path with the successful operation of an ion trap fabricated on an integrated gallium arsenide (GaAs) heterostructure, which could in principal scale to host a large array of ions