The ability to preferentially spin-polarise a photoexcited carrier population in a quantum well by optical pumping methods has enabled us to study the fine structure and some of the parameters governing the spin relaxation dynamics of excitons, heavy-holes and electrons in a number of type I GaAs/AlxGa1-xAs and type I InxGa1-xAs/GaAs single and multiple quantum wells.The electron, hole and excitonic effective Lande g-factors have been measured as a function of quantum well thickness in GaAs/Al0.36Ga0.64As and In0.11Ga0.89As/GaAs. For the GaAs/AlGaAs wells, we observed a change in sign of the exciton g-factor and using k.p perturbation theory to model the form of the electron g-factor, we obtained the hole g-factor as a function of well widt...
Abstract: We study both theoretically and experimental1 the luminescence in non-intentionally but he...
We present a detailed experimental and theoretical analysis of the spin dynamics of two-dimensional ...
Due to its p-like character, the valence band in GaAs-based heterostructures offers rich and complex...
We have made a systematic investigation of spin relaxation and related phenomena in type l GaAs-AlxG...
We have used time-resolved optical techniques to investigate the spin and phase relaxation and quant...
Measurements of excitonic Zeeman splitting have been made in a range of InGaAs/GaAs and GaInP/AlGaIn...
We have investigated exciton dynamics and spin relaxation in a GaAs/AlAs multiple quantum well and i...
Carrier spin dynamics have been investigated in Type I gallium arsenide/aluminium gallium arsenide q...
The dynamics of exciton saturation in GaAs/AlGaAs multiple quantum wells are investigated using pico...
The exciton spin dynamics are investigated both experimentally and theoretically in two-monolayer-th...
We have investigated the exciton spin dynamics in strained InxGa1-x As/GaAs (x ≤ 0.2) quantum wells....
We present a detailed experimental and theoretical analysis of the optical orientation of electron s...
Spin and population dynamics of photoexcited carriers in GaAs/AlGaAs and InGaAs/InP quantum wells is...
The Zeeman splitting and the underlying value of the g-factor for conduction band electrons in GaAs/...
Recent experiments have demonstrated long spin lifetimes in uniformly n-doped quantum wells. The spi...
Abstract: We study both theoretically and experimental1 the luminescence in non-intentionally but he...
We present a detailed experimental and theoretical analysis of the spin dynamics of two-dimensional ...
Due to its p-like character, the valence band in GaAs-based heterostructures offers rich and complex...
We have made a systematic investigation of spin relaxation and related phenomena in type l GaAs-AlxG...
We have used time-resolved optical techniques to investigate the spin and phase relaxation and quant...
Measurements of excitonic Zeeman splitting have been made in a range of InGaAs/GaAs and GaInP/AlGaIn...
We have investigated exciton dynamics and spin relaxation in a GaAs/AlAs multiple quantum well and i...
Carrier spin dynamics have been investigated in Type I gallium arsenide/aluminium gallium arsenide q...
The dynamics of exciton saturation in GaAs/AlGaAs multiple quantum wells are investigated using pico...
The exciton spin dynamics are investigated both experimentally and theoretically in two-monolayer-th...
We have investigated the exciton spin dynamics in strained InxGa1-x As/GaAs (x ≤ 0.2) quantum wells....
We present a detailed experimental and theoretical analysis of the optical orientation of electron s...
Spin and population dynamics of photoexcited carriers in GaAs/AlGaAs and InGaAs/InP quantum wells is...
The Zeeman splitting and the underlying value of the g-factor for conduction band electrons in GaAs/...
Recent experiments have demonstrated long spin lifetimes in uniformly n-doped quantum wells. The spi...
Abstract: We study both theoretically and experimental1 the luminescence in non-intentionally but he...
We present a detailed experimental and theoretical analysis of the spin dynamics of two-dimensional ...
Due to its p-like character, the valence band in GaAs-based heterostructures offers rich and complex...